DATA SHEET www.onsemi.com MOSFET Power, Single V R MAX I MAX N-Channel, 8FL (BR)DSS DS(on) D 30 V, 5.9 m , 55 A 5.9 m 10 V 30 V 55 A 9.0 m 4.5 V NVTFS4C08N Features NChannel MOSFET Low R to Minimize Conduction Losses DS(on) D (58) Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVTFS4C08NWF Wettable Flanks Product G (4) NVT Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable S (1,2,3) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM MAXIMUM RATINGS (T = 25C unless otherwise stated) J 1 WDFN8 Parameter Symbol Value Unit S D CASE 511AB 1 XXXX S D DraintoSource Voltage V 30 V DSS AYWW S D WDFNW8 GatetoSource Voltage V 20 V GS G D CASE 515AN Continuous Drain T = 25C I 17 A A D Current R JA T = 100C 12 4C08 = Specific Device Code for (Notes 1, 2, 4) A NVMTS4C08N T = 25C P 3.1 W Power Dissipation R JA A D 08WF = Specific Device Code of (Note 1, 2, 4) T = 100C 1.6 A NVTFS4C08NWF Steady State A = Assembly Location Continuous Drain T = 25C I 55 A D Y = Year Current R (Note 1, JC T = 100C 39 A WW = Work Week 3, 4) A = PbFree Package Power Dissipation T = 25C P 31 W A D (Note: Microdot may be in either location) R (Note 1, 3, 4) JC T = 100C 15 A Pulsed Drain Current T = 25C, t = 10 s I 253 A A p DM ORDERING INFORMATION Operating Junction and Storage Temperature T , 55 to C J See detailed ordering and shipping information on page 5 of T +175 stg this data sheet. Source Current (Body Diode) I 28 A S Single Pulse DraintoSource Avalanche Energy E 20 mJ AS (T = 25C, I = 20 A , L = 0.1 mH) J L pk Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State (Drain) R 4.9 JC (Notes 1 and 4) C/W JunctiontoAmbient Steady State R 48 JA (Notes 1 and 2) 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm 2 oz. Cu pad. 3. Assumes heatsink sufficiently large to maintain constant case temperature independent of device power. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: September, 2021 Rev. 2 NVTFS4C08N/DNVTFS4C08N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 30 V V = 0 V, I = 250 A (BR)DSS GS D DraintoSource Breakdown Voltage V / 13.8 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 1.3 2.2 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 4.7 5.9 DS(on) GS D m V = 4.5 V I = 18 A 7.2 9.0 GS D Forward Transconductance g V = 1.5 V, I = 15 A 42 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 1113 ISS Output Capacitance C 702 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 39 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.035 RSS ISS GS DS Total Gate Charge Q 8.4 G(TOT) Threshold Gate Charge Q 1.8 G(TH) nC GatetoSource Charge Q 3.5 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 3.3 GD Gate Plateau Voltage V 3.4 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 18.2 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 9.0 d(ON) Rise Time t 33 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 TurnOff Delay Time t D G 15 d(OFF) Fall Time t 4.0 f TurnOn Delay Time t 7.0 d(ON) Rise Time t 26 r V = 10 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 TurnOff Delay Time t D G 19 d(OFF) Fall Time t 3.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.79 1.1 SD J V = 0 V, GS V I = 10 A S T = 125C 0.66 J Reverse Recovery Time t 28.3 RR Charge Time t 14.5 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 30 A S Discharge Time t 13.8 b Reverse Recovery Charge Q 15.3 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2