NVTFS4C10N MOSFET Power, Single N-Channel, 8FL 30 V, 7.4 m , 47 A Features Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V R MAX I MAX (BR)DSS DS(on) D NVTFS4C10NWF Wettable Flanks Product 7.4 m 10 V NVT Prefix for Automotive and Other Applications Requiring 30 V 47 A 11 m 4.5 V Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable NChannel MOSFET These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant D (58) MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS G (4) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 15.3 A A D S (1,2,3) Current R JA T = 100C 10.8 (Notes 1, 2, 4) A Power Dissipation R T = 25C P 3.0 W JA D A MARKING DIAGRAM (Notes 1, 2, 4) 1 T = 100C 1.5 A Steady 1 S D State Continuous Drain I A T = 25C 47 D C XXXX WDFN8 S D Current R JC AYWW ( 8FL) S D T = 100C 33 (Notes 1, 3, 4) C G D CASE 511AB Power Dissipation P T = 25C 28 W C D R (Notes 1, 3, 4) JC T = 100C 14 W C 4C10 = Specific Device Code for Pulsed Drain Current I 196 A T = 25C, t = 10 s A p DM NVMTS4C10N WF10 = Specific Device Code of Operating Junction and Storage Temperature T , 55 to C J NVTFS4C10NWF T +175 stg A = Assembly Location Source Current (Body Diode) I 53 A S Y = Year Single Pulse DraintoSource Avalanche Energy E 26 mJ AS WW = Work Week (T = 25C, V = 10 V, I = 10.2 A, L = 0.5 mH) J GS L = PbFree Package Lead Temperature for Soldering Purposes T 260 C (Note: Microdot may be in either location) L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) (Notes 1, 3) R 5.4 JC C/W JunctiontoAmbient Steady State 50 R JA (Notes 1, 2) 1. The entire application environment impacts the thermal resistance values shown they are not constants and are valid for the specific conditions noted. 2 2. Surfacemounted on FR4 board using 650 mm , 2 oz. Cu Pad. 3. Assumes heatsink sufficiently large to maintain constant case temperature independent of device power. 4. Continuous DC current rating. Maximum current for pulses as long as one second is higher but dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2019 Rev. 3 NVTFS4C10N/DNVTFS4C10N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 14.5 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J A V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 4.5 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 5.9 7.4 DS(on) GS D m V = 4.5 V I = 15 A 8.8 11 GS D Forward Transconductance g V = 1.5 V, I = 15 A 43 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 993 ISS Output Capacitance C V = 0 V, f = 1 MHz, V = 15 V 574 pF OSS GS DS Reverse Transfer Capacitance C 163 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.164 RSS ISS GS DS Total Gate Charge Q 10.1 G(TOT) Threshold Gate Charge Q 1.8 G(TH) nC GatetoSource Charge Q V = 4.5 V, V = 15 V I = 30 A 2.6 GS GS DS D GatetoDrain Charge Q 6.1 GD Gate Plateau Voltage V 3.2 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 19.3 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 9.0 d(ON) Rise Time t 30 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 14 d(OFF) Fall Time t 7.0 f TurnOn Delay Time t 6.0 d(ON) Rise Time t 25 r V = 10 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 18 d(OFF) Fall Time t 4.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.80 1.1 SD J V = 0 V, GS V I = 10 A S T = 125C 0.67 J Reverse Recovery Time t 23.3 RR Charge Time t 12.7 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 30 A S Discharge Time t 10.6 b Reverse Recovery Charge Q 8.3 nC RR 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2