NVTFS5811NLWFTWG ON Semiconductor

NVTFS5811NL MOSFET Power, Single N-Channel 40 V, 6.7 m , 40 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design NVTFS5811NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 40 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.2 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 20 A 5.8 6.7 m DS(on) GS D V = 4.5 V, I = 20 A 8.8 10 GS D Forward Transconductance g V = 5 V, I = 10 A 24.6 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 1570 pF iss GS V = 25 V DS Output Capacitance C 215 oss Reverse Transfer Capacitance C 157 rss Total Gate Charge Q 17 nC G(TOT) Threshold Gate Charge Q 1 nC G(TH) V = 4.5 V, V = 32 V, I = 20 A, GS DS D R = 2.5 GatetoSource Charge Q G 5 GS GatetoDrain Charge Q 9 GD Total Gate Charge Q V = 10 V, V = 32 V, I = 20 A 30 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 11 ns d(on) Rise Time t 55 r V = 4.5 V, V = 32 V, GS DS I = 20 A, R = 2.5 D G TurnOff Delay Time t 20 d(off) Fall Time t 40 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.83 1.2 V SD GS J I = 20 A S T = 125C 0.70 J Reverse Recovery Time t 22 ns RR Charge Time t 12 a V = 0 V, dI /dt = 100 A/ s, GS S I = 20 A S Discharge Time t 10 b Reverse Recovery Charge Q 17 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.