Product Information

NX3008NBKT,115

NX3008NBKT,115 electronic component of NXP

Datasheet
MOSFET 30V 350 MA N-CH TRENCH MOSFET

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 0.041
18000 : USD 0.0405
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.4576
10 : USD 0.3053
100 : USD 0.1273
1000 : USD 0.0872
3000 : USD 0.0665
9000 : USD 0.0558
24000 : USD 0.0529
45000 : USD 0.0493
99000 : USD 0.0422
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of NX3008NBKT 30 V, 350 mA N-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T=25C --30 V V DS j gate-source voltage -8 - 8 V V GS 1 drain current V =4.5 V - - 350 mA I D GS T =25C amb Static characteristics R drain-source on-state V =4.5 V I =350mA -1 1.4 DSon GS D resistance T =25C j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT416

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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