SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor V T 560 V DS jmax Feature R 0.6 DS(on) New revolutionary high voltage technology I 7.6 A D Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31 -3-111: Fully isolated package (2500 VAC 1 minute) Type Package Ordering Code Marking SPP08N50C3 PG-TO220 Q67040-S4567 08N50C3 SPI08N50C3 PG-TO262 Q67040-S4568 08N50C3 SPA08N50C3 PG-TO220FP SP000216306 08N50C3 Maximum Ratings Parameter Symbol Value Unit SPP I SPA Continuous drain current I A D 1) T = 25 C 7.6 7.6 C 1) T = 100 C 4.6 4.6 C Pulsed drain current, t limited by T I 22.8 22.8 A p jmax D puls Avalanche energy, single pulse E 230 230 mJ AS I =5.5A, V =50V D DD 2) E Avalanche energy, repetitive t limited by T 0.5 0.5 AR AR jmax I =7.6A, V =50V D DD Avalanche current, repetitive t limited by T I 7.6 7.6 A AR jmax AR Gate source voltage V 20 20 V GS V Gate source voltage AC (f >1Hz) 30 30 GS Power dissipation, T = 25C P 83 32 W C tot Operating and storage temperature T , T -55...+150 C j stg 6) Reverse diode dv/dt dv/dt 15 V/ns Rev. 2.91 Page 1 2009-11-27SPP08N50C3, SPI08N50C3 SPA08N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 400 V, I = 7.6 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 1.5 K/W Thermal resistance, junction - case thJC - - 3.9 Thermal resistance, junction - case, FullPAK R thJC FP R - - 62 Thermal resistance, junction - ambient, leaded thJA - - 80 Thermal resistance, junction - ambient, FullPAK R thJA FP - - 260 C Soldering temperature, wavesoldering T sold 3) 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T =25C unless otherwise specified j Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA 500 - - V Drain-source breakdown voltage (BR)DSS GS D V =0V, I =7.6A - 600 - Drain-Source avalanche V (BR)DS GS D breakdown voltage I =350A, V =V 2.1 3 3.9 Gate threshold voltage V GS(th) D GS DS V =500V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C - 0.5 1 j T =150C - - 100 j V =20V, V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =4.6A Drain-source on-state resistance R GS D DS(on) T =25C - 0.5 0.6 j T =150C - 1.5 - j R f=1MHz, open drain - 1.2 - Gate input resistance G Rev. 2.91 Page 2 2009-11-27