X-On Electronics has gained recognition as a prominent supplier of SPA08N50C3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SPA08N50C3 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SPA08N50C3 Infineon

SPA08N50C3 electronic component of Infineon
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See Product Specifications
Part No.SPA08N50C3
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Ch 560V 7.6A TO220FP-3 CoolMOS C3
Datasheet: SPA08N50C3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 447
Multiples : 447
447 : USD 0.942
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.2275
10 : USD 1.875
100 : USD 1.525
500 : USD 1.224
1000 : USD 1.0644
2500 : USD 0.9924
5000 : USD 0.9792
10000 : USD 0.9792
25000 : USD 0.978
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.3837
5 : USD 1.1772
7 : USD 0.9504
29 : USD 0.9072
N/A

Obsolete
   
Manufacturer
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the SPA08N50C3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPA08N50C3 and other electronic components in the MOSFETs category and beyond.

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SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor V T 560 V DS jmax Feature R 0.6 DS(on) New revolutionary high voltage technology I 7.6 A D Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31 -3-111: Fully isolated package (2500 VAC 1 minute) Type Package Ordering Code Marking SPP08N50C3 PG-TO220 Q67040-S4567 08N50C3 SPI08N50C3 PG-TO262 Q67040-S4568 08N50C3 SPA08N50C3 PG-TO220FP SP000216306 08N50C3 Maximum Ratings Parameter Symbol Value Unit SPP I SPA Continuous drain current I A D 1) T = 25 C 7.6 7.6 C 1) T = 100 C 4.6 4.6 C Pulsed drain current, t limited by T I 22.8 22.8 A p jmax D puls Avalanche energy, single pulse E 230 230 mJ AS I =5.5A, V =50V D DD 2) E Avalanche energy, repetitive t limited by T 0.5 0.5 AR AR jmax I =7.6A, V =50V D DD Avalanche current, repetitive t limited by T I 7.6 7.6 A AR jmax AR Gate source voltage V 20 20 V GS V Gate source voltage AC (f >1Hz) 30 30 GS Power dissipation, T = 25C P 83 32 W C tot Operating and storage temperature T , T -55...+150 C j stg 6) Reverse diode dv/dt dv/dt 15 V/ns Rev. 2.91 Page 1 2009-11-27SPP08N50C3, SPI08N50C3 SPA08N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 400 V, I = 7.6 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 1.5 K/W Thermal resistance, junction - case thJC - - 3.9 Thermal resistance, junction - case, FullPAK R thJC FP R - - 62 Thermal resistance, junction - ambient, leaded thJA - - 80 Thermal resistance, junction - ambient, FullPAK R thJA FP - - 260 C Soldering temperature, wavesoldering T sold 3) 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T =25C unless otherwise specified j Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA 500 - - V Drain-source breakdown voltage (BR)DSS GS D V =0V, I =7.6A - 600 - Drain-Source avalanche V (BR)DS GS D breakdown voltage I =350A, V =V 2.1 3 3.9 Gate threshold voltage V GS(th) D GS DS V =500V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C - 0.5 1 j T =150C - - 100 j V =20V, V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =4.6A Drain-source on-state resistance R GS D DS(on) T =25C - 0.5 0.6 j T =150C - 1.5 - j R f=1MHz, open drain - 1.2 - Gate input resistance G Rev. 2.91 Page 2 2009-11-27

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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