X-On Electronics has gained recognition as a prominent supplier of SPA07N60C3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SPA07N60C3 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SPA07N60C3 Infineon

SPA07N60C3 electronic component of Infineon
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See Product Specifications
Part No.SPA07N60C3
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Ch 600V 7.3A TO220FP-3 CoolMOS C3
Datasheet: SPA07N60C3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.4725 ea
Line Total: USD 2.47 
Availability - 689
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
16
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 2.3956
10 : USD 2.0586
50 : USD 1.848
100 : USD 1.6335
500 : USD 1.5358
1000 : USD 1.4936

689
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 2.4725
10 : USD 1.4375
100 : USD 1.3225
500 : USD 1.2995
1000 : USD 1.1396
10000 : USD 1.1328

61
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 2.52
3 : USD 2.226
9 : USD 2.002
25 : USD 1.89
50 : USD 1.862

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SPA07N60C3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPA07N60C3 and other electronic components in the MOSFETs category and beyond.

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SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor V T 650 V DS jmax Feature R 0.6 DS(on) New revolutionary high voltage technology I 7.3 A D Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 PG-TO-220-3-31 -3-111: Fully isolated package (2500 VAC 1 minute) Type Package Ordering Code Marking SPP07N60C3 PG-TO220-3 Q67040-S4400 07N60C3 SPI07N60C3 PG-TO262 Q67040-S4424 07N60C3 SPA07N60C3 PG-TO220FP 07N60C3 SP000216303 Maximum Ratings Parameter Symbol Value Unit SPP I SPA Continuous drain current I A D 1) T = 25 C 7.3 7.3 C 1) T = 100 C 4.6 4.6 C Pulsed drain current, t limited by T I 21.9 21.9 A p jmax D puls Avalanche energy, single pulse E 230 230 mJ AS I =5.5A,V =50V D DD 2) E Avalanche energy, repetitive t limited by T 0.5 0.5 AR AR jmax I =7.3A,V =50V D DD Avalanche current, repetitive t limited by T I 7.3 7.3 A AR jmax AR Gate source voltage static V 20 20 V GS V Gate source voltage AC (f >1Hz) 30 30 GS Power dissipation, T = 25C P 83 32 W C tot Operating and storage temperature T , T -55...+150 C j stg 6) Reverse diode dv/dt dv/dt 15 V/ns Page 1 Rev. 3.2 2009-11-27 Rev. 3.3 Page 1 2018-02-13SPP07N60C3 SPI07N60C3, SPA07N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 480 V, I = 7.3 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 1.5 K/W Thermal resistance, junction - case thJC - - 3.9 Thermal resistance, junction - case, FullPAK R thJC FP R - - 62 Thermal resistance, junction - ambient, leaded thJA - - 80 Thermal resistance, junction - ambient, FullPAK R thJA FP SMD version, device on PCB: R thJA min. footprint - - 62 2 3) 6 cm cooling area - 35 - - - 260 C Soldering temperature, wavesoldering T sold 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T =25C unless otherwise specified j Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA - - V Drain-source breakdown voltage 600 (BR)DSS GS D V =0V, I =7.3A - 700 - Drain-Source avalanche V GS D (BR)DS breakdown voltage I =350A, V =V 2.1 3 3.9 Gate threshold voltage V D GS DS GS(th) V =600V,V =0V, A Zero gate voltage drain current I DS GS DSS T =25C - 0.5 1 j T =150C - - 100 j V =30V,V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =4.6A Drain-source on-state resistance R GS D DS(on) T =25C - 0.54 0.6 j T =150C - 1.46 - j R f=1MHz, open drain - 0.8 - Gate input resistance G Page 2 Rev. 3.2 2009-11-27 Rev. 3.3 Page 2 2018-02-13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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