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NX3008PBK

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MOSFET, P CH, -30V, -230MA, SOT23

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.2179 ea
Line Total: USD 1.09

0 - Global Stock

MOQ: 5 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 15 May to Tue. 21 May MOQ : 5 Multiples : 1 NX3008PBK NXP	5 : USD 0.2063 50 : USD 0.1539 100 : USD 0.1092 500 : USD 0.0723 1500 : USD 0.0714

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Additional Infomation About Product

NX3008PBK 30 V, 230 mA P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T =25C - - -30 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C - - -230 mA D GS amb Static characteristics R drain-source on-state V =-4.5V -2.8 4.1 DSon GS resistance I = -200 mA T =25C D j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT23NX3008PBK NXP Semiconductors 30 V, 230 mA P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 3 2S source 3 D drain G 12 SOT23 (TO-236AB) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3008PBK TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code NX3008PBK KT% 1 % = placeholder for manufacturing site code. NX3008PBK All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 1 August 2011 2 of 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category MOSFET MOSFET
Transistor Polarity P Channel P Channel
Brand Nxp Nxp
Continuous Drain Current Id - 230 mA - 230 mA
Drain Source Voltage Vds - 30 V - 30 V
On Resistance Rdson 2.8 Ohms 2.8 Ohms
Rdson Test Voltage Vgs - 4.5 V - 4.5 V
Threshold Voltage Vgs - 900 mV - 900 mV
Power Dissipation Pd 350 mW 350 mW
Transistor Case Style SOT - 23 SOT - 23
No. Of Pins 3Pins 3Pins
Operating Temperature Max 150 C 150 C
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc No SVHC (15 - Jan - 2018) No SVHC (15 - Jan - 2018)
Operating Temperature Min - 55 C - 55 C
Operating Temperature Range - 55 C to + 150 C - 55 C to + 150 C
Pulse Current Idm - 0.8 A - 0.8 A
Voltage Vgs Th Max 8 V 8 V