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NX3008PBKT

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MOSFET, P CH, 30V, 200MA, SOT416

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.1622 ea
Line Total: USD 0.16

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 1 Multiples : 1 NX3008PBKT NXP	1 : USD 0.1622 25 : USD 0.1232 100 : USD 0.0835 250 : USD 0.0663

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Additional Infomation About Product

NX3008PBKT 30 V, 200 mA P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T =25C - - -30 V V DS j gate-source voltage -8 - 8 V V GS 1 drain current V =-4.5V T =25C -- -200mA I D GS amb Static characteristics drain-source on-state V =-4.5V -2.8 4.1 R DSon GS resistance I =-200mA T =25C D j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT416NX3008PBKT NXP Semiconductors 30 V, 200 mA P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 SOT416 (SOT416) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3008PBKT SOT416 plastic surface-mounted package 3 leads SOT416 4. Marking Table 4. Marking codes 1 Type number Marking code NX3008PBKT AB 1 % = placeholder for manufacturing site code. NX3008PBKT All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 1 August 2011 2 of 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category MOSFET MOSFET
Transistor Polarity P Channel P Channel
Continuous Drain Current Id - 200 mA - 200 mA
Drain Source Voltage Vds - 30 V - 30 V
On Resistance Rds On 2.8 Ohms 2.8 Ohms
Rds On Test Voltage Vgs - 4.5 V - 4.5 V
Threshold Voltage Vgs - 900 mV - 900 mV
Power Dissipation Pd 250 mW 250 mW
Transistor Case Style Sot - 416 Sot - 416
No Of Pins 3 3
Operating Temperature Max 150 C 150 C
Msl Msl 1 - Unlimited Msl 1 - Unlimited
Svhc No Svhc (15 - Jun - 2015) No Svhc (15 - Jun - 2015)
Operating Temperature Min - 55 C - 55 C
Operating Temperature Range - 55 C to + 150 C - 55 C to + 150 C
Pulse Current Idm - 0.8 A - 0.8 A
Voltage Vgs Th Max 8 V 8 V