NX3008PBKT NXP

NX3008PBKT 30 V, 200 mA P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T =25C - - -30 V V DS j gate-source voltage -8 - 8 V V GS 1 drain current V =-4.5V T =25C -- -200mA I D GS amb Static characteristics drain-source on-state V =-4.5V -2.8 4.1 R DSon GS resistance I =-200mA T =25C D j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT416NX3008PBKT NXP Semiconductors 30 V, 200 mA P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 SOT416 (SOT416) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3008PBKT SOT416 plastic surface-mounted package 3 leads SOT416 4. Marking Table 4. Marking codes 1 Type number Marking code NX3008PBKT AB 1 % = placeholder for manufacturing site code. NX3008PBKT All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 1 August 2011 2 of 16