NX3020NAKS Nexperia

NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 4.5 V T = 25 C 1 - - 180 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = 10 V I = 100 mA T = 25 C - 2.7 4.5 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this productNXP Semiconductors NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 6 5 4 2 G1 gate TR1 G1 3 D2 drain TR2 G2 1 2 3 4 S2 source TR2 TSSOP6 (SOT363) 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa256 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3020NAKS TSSOP6 plastic surface-mounted package 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code 1 NX3020NAKS Ua% 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T = 25 C - 30 V DS j V gate-source voltage -20 20 V GS I drain current V = 4.5 V T = 25 C 1 - 180 mA D GS amb V = 4.5 V T = 100 C 1 - 110 mA GS amb I peak drain current T = 25 C single pulse t 10 s - 720 mA DM amb p P total power dissipation T = 25 C 2 - 260 mW tot amb 1 - 280 mW NX3020NAKS All information provided in this document is subject to legal disclaimers. NXP N.V. 2013. All rights reserved Product data sheet 11 November 2013 2 / 15