NX3008PBKV Nexperia

NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET Rev. 1 29 July 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T =25C - - -30 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C - - -220 mA D GS amb Static characteristics (per transistor) R drain-source on-state V =-4.5V I =-200mA -2.8 4.1 DSon GS D resistance T =25C j 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . SOT666NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 4 D1 D2 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 5 G2 gate TR2 12 3 6D1 drain TR1 SOT666 (SOT666) S1 S2 017aaa260 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3008PBKV SOT666 plastic surface-mounted package 6 leads SOT666 4. Marking Table 4. Marking codes 1 Type number Marking code NX3008PBKV AB 1 % = placeholder for manufacturing site code NX3008PBKV All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 29 July 2011 2 of 17