NX3008PBKMB NXP

NX3008PBKMB 30 V, single P-channel Trench MOSFET Rev. 1 11 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage Ultra thin package profile with 0.37 mm height Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C ---30 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C ---300mA D GS amb Static characteristics R drain-source on-state V =-4.5V I = -200 mA T =25C - 2.8 4.1 DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT883BNX3008PBKMB NXP Semiconductors 30 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 2S source 3 3 D drain 2 G Transparent top view SOT883B (DFN1006B-3) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3008PBKMB DFN1006B-3 Leadless ultra small plastic package 3 solder lands SOT883B body 1.0 0.6 0.37 mm 4. Marking Table 4. Marking codes Type number Marking code NX3008PBKMB 0000 0100 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. DFN1006B-3 (SOT883B) binary marking code description NX3008PBKMB All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 11 May 2012 2 of 15