X-On Electronics has gained recognition as a prominent supplier of SP8K1TB MOSFETs across the USA, India, Europe, Australia, and various other global locations. SP8K1TB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SP8K1TB ROHM

SP8K1TB electronic component of ROHM
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Part No.SP8K1TB
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET TRANS MOSFET NCH 30V 5A 8PIN
Datasheet: SP8K1TB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0967 ea
Line Total: USD 1.1 
Availability - 1
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0967
10 : USD 0.7909
100 : USD 0.5621
500 : USD 0.4675
1000 : USD 0.4202
2500 : USD 0.3795
5000 : USD 0.3795
10000 : USD 0.3641

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the SP8K1TB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SP8K1TB and other electronic components in the MOSFETs category and beyond.

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( ) 5 (4) ( ) ( ) 8 1 SP8K1 Transistors Switching (30V, 5.0A) SP8K1 z External dimensions (Unit : mm) z Features 1) Low on-resistance. SOP8 2) Built-in G-S Protection Diode. 5.00.2 3) Small and Surface Mount Package (SOP8). z Application Power switching, DC / DC converter. 0.20.1 0.40.1 z Structure 1.27 0.1 Silicon N-channel Each lead has same dimensions MOS FET z Equivalent circuit z Absolute maximum ratings (Ta=25C) It is the same ratings for the Tr. 1 and Tr. 2. (8) (7) (6) (5) (8) (7) (6) (5) Parameter Symbol Limits Unit Drain-source voltage V 30 V DSS Gate-source voltage VGSS 20 V I 5.0 A Continuous D 2 2 Drain current (1) (2) (3) (4) 1 Pulsed IDP 20 A (1) Tr1 Source Source current Continuous IS 1.6 A (2) Tr1 Gate (Body diode) 1 1 1 Pulsed ISP 6.4 A (3) Tr2 Source 2 (4) Tr2 Gate Total power dissipation PD 2 W (5) Tr2 Drain Channel temperature Tch 150 C (1) (2) (3) (4) (6) Tr2 Drain Storage temperature Tstg 55 to +150 C (7) Tr1 Drain 1 ESD PROTECTION DIODE (8) Tr1 Drain 1 Pw 10s, Duty cycle 1% 2 BODY DIODE 2 MOUNTED ON A CERAMIC BOARD. A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. z Thermal resistance (Ta=25C) Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 62.5 C / W MOUNTED ON A CERAMIC BOARD. 1/3 6.00.3 1.50.1 3.90.15 0.15 Max.1.75 0.50.1SP8K1 Transistors z Electrical characteristics (Ta=25C) It is the same characteristics for the Tr. 1 and Tr. 2. Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 VID=1mA, VGS=0V Zero gate voltage drain current I 1 AV =30V, V =0V DSS DS GS Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 36 51 ID=5.0A, VGS=10V Static drain-source on-state R 52 73 m I =5.0A, V =4.5V DS (on) D GS resistance 58 82 ID=5.0A, VGS=4V Forward transfer admittance Yfs 3.0 SID=5.0A, VDS=10V Input capacitance Ciss 230 pF VDS=10V Output capacitance C 80 pF V =0V oss GS Reverse transfer capacitance Crss 50 pF f=1MHz Turn-on delay time td (on) 6 ns ID=2.5A, VDD 15V Rise time tr 8 ns V =10V GS Turn-off delay time td (off) 22 ns RL=6 Fall time tf 5 ns RGS=10 Total gate charge Qg 3.9 5.5 nC VDD 15V Gate-source charge Q 1.1 nC V =5V gs GS Gate-drain charge Qgd1.4 nC ID=5.0A Pulsed z Body diode characteristics (Source-Drain Characteristics) (Ta=25C) It is the same characteristics for the Tr. 1 and Tr. 2. Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=6.4A, VGS=0V Pulsed 2/3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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