( ) 5 (4) ( ) ( ) 8 1 SP8K1 Transistors Switching (30V, 5.0A) SP8K1 z External dimensions (Unit : mm) z Features 1) Low on-resistance. SOP8 2) Built-in G-S Protection Diode. 5.00.2 3) Small and Surface Mount Package (SOP8). z Application Power switching, DC / DC converter. 0.20.1 0.40.1 z Structure 1.27 0.1 Silicon N-channel Each lead has same dimensions MOS FET z Equivalent circuit z Absolute maximum ratings (Ta=25C) It is the same ratings for the Tr. 1 and Tr. 2. (8) (7) (6) (5) (8) (7) (6) (5) Parameter Symbol Limits Unit Drain-source voltage V 30 V DSS Gate-source voltage VGSS 20 V I 5.0 A Continuous D 2 2 Drain current (1) (2) (3) (4) 1 Pulsed IDP 20 A (1) Tr1 Source Source current Continuous IS 1.6 A (2) Tr1 Gate (Body diode) 1 1 1 Pulsed ISP 6.4 A (3) Tr2 Source 2 (4) Tr2 Gate Total power dissipation PD 2 W (5) Tr2 Drain Channel temperature Tch 150 C (1) (2) (3) (4) (6) Tr2 Drain Storage temperature Tstg 55 to +150 C (7) Tr1 Drain 1 ESD PROTECTION DIODE (8) Tr1 Drain 1 Pw 10s, Duty cycle 1% 2 BODY DIODE 2 MOUNTED ON A CERAMIC BOARD. A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. z Thermal resistance (Ta=25C) Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 62.5 C / W MOUNTED ON A CERAMIC BOARD. 1/3 6.00.3 1.50.1 3.90.15 0.15 Max.1.75 0.50.1SP8K1 Transistors z Electrical characteristics (Ta=25C) It is the same characteristics for the Tr. 1 and Tr. 2. Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 VID=1mA, VGS=0V Zero gate voltage drain current I 1 AV =30V, V =0V DSS DS GS Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 36 51 ID=5.0A, VGS=10V Static drain-source on-state R 52 73 m I =5.0A, V =4.5V DS (on) D GS resistance 58 82 ID=5.0A, VGS=4V Forward transfer admittance Yfs 3.0 SID=5.0A, VDS=10V Input capacitance Ciss 230 pF VDS=10V Output capacitance C 80 pF V =0V oss GS Reverse transfer capacitance Crss 50 pF f=1MHz Turn-on delay time td (on) 6 ns ID=2.5A, VDD 15V Rise time tr 8 ns V =10V GS Turn-off delay time td (off) 22 ns RL=6 Fall time tf 5 ns RGS=10 Total gate charge Qg 3.9 5.5 nC VDD 15V Gate-source charge Q 1.1 nC V =5V gs GS Gate-drain charge Qgd1.4 nC ID=5.0A Pulsed z Body diode characteristics (Source-Drain Characteristics) (Ta=25C) It is the same characteristics for the Tr. 1 and Tr. 2. Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=6.4A, VGS=0V Pulsed 2/3