SP8K2FU6TB ROHM

SP8K2 Transistors 4V Drive Nch+Nch MOSFET SP8K2 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 5.0 1.75 0.4 ( ) (5) 8 z Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). (1) (4) 0.2 1.27 1pin mark Each lead has same dimensions Abbreviated symbol : SP8K2 z Application Power switching, DC / DC converter. z Packaging specifications z Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 SP8K2 2 2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate 1 1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain (7) Tr1 Drain 1 ESD PROTECTION DIODE (8) Tr1 Drain 2 BODY DIODE A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection z Absolute maximum ratings (Ta=25C) circuit when the fixed voltages are exceeded. <It is the same ratings for the Tr1 and Tr2.> Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V I 6.0 A Continuous D Drain current 1 Pulsed IDP 24 A Source current Continuous IS 1.6 A (Body diode) 1 I 6.4 A Pulsed SP 2 Total power dissipation PD 2 W Channel temperature Tch 150 C Tstg 55 to +150 C Storage temperature 1 Pw 10s, Duty cycle 1% 2 MOUNTED ON A CERAMIC BOARD. z Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 62.5 C / W MOUNTED ON A CERAMIC BOARD. Rev.B 1/3 3.9 6.0 0.4Min.SP8K2 Transistors z Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 30 VI =1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 21 30 I =6.0A, V =10V D GS Static drain-source on-state RDS (on) 30 42 m ID=6.0A, VGS=4.5V resistance 33 47 ID=6.0A, VGS=4V Forward transfer admittance Y 4.0 SI =6.0A, V =10V fs D DS Input capacitance Ciss 520 pF VDS=10V Output capacitance Coss 150 pF VGS=0V Reverse transfer capacitance C 95 pF f=1MHz rss Turn-on delay time td (on) 9 ns ID=3A, VDD 15V Rise time tr 21 ns VGS=10V Turn-off delay time t 36 ns R =5 d (off) L Fall time tf 13 ns RG =10 Total gate charge Qg 7.2 10.1 nC VDD 15V Gate-source charge Q 1.8 nC V =5V gs GS Gate-drain charge Qgd2.8 nC ID=6.0A Pulsed z Body diode characteristics (Source-drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=6.4A, VGS=0V Pulsed Rev.B 2/3