X-On Electronics has gained recognition as a prominent supplier of SP8M21FRATB MOSFETs across the USA, India, Europe, Australia, and various other global locations. SP8M21FRATB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SP8M21FRATB ROHM

SP8M21FRATB electronic component of ROHM
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See Product Specifications
Part No.SP8M21FRATB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET, AEC-Q101, N-CH, 45V, 6A, SOP-8
Datasheet: SP8M21FRATB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8743 ea
Line Total: USD 0.87 
Availability - 1465
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1465
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8743
10 : USD 0.8651
100 : USD 0.8582
500 : USD 0.8559
1000 : USD 0.7161
2500 : USD 0.6583
10000 : USD 0.6572

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
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We are delighted to provide the SP8M21FRATB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SP8M21FRATB and other electronic components in the MOSFETs category and beyond.

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SP8M21FRA Datasheet 45V Nch+Pch Power MOSFET llOutline Tr1:Nch Tr2:Pch Symbol V 45V -45V DSS SOP8 R (Max.) 25m 46m DS(on) I 6.0A 4.0A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Basic ordering unit (pcs) 2500 Taping code TB Marking SP8M21 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Pch V Drain - Source voltage 45 -45 V DSS I Continuous drain current 6.0 4.0 A D *1 I Pulsed drain current 24 16 A DP V Gate - Source voltage 20 20 V GSS *2 P 2.0 D Power dissipation total W *3 P 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/19 20180712 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. SP8M21FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 thJA Thermal resistance, junction - ambient total /W *3 R - - 89.2 thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. V = 0V, I = 1mA Tr1 45 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = -1mA -45 - - GS D V I = 1mA, referenced to 25 (BR)DSS Tr1 D - 46.8 - Breakdown voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 D - -50 - Tr1 V = 45V, V = 0V - - 1 DS GS Zero gate voltage I A DSS drain current Tr2 V = -45V, V = 0V - - -1 DS GS Tr1 V = 20V, V = 0V - - 10 GS DS Gate - Source I A GSS leakage current Tr2 V = 20V, V = 0V - - 10 GS DS Tr1 V = 10V, I = 1mA 1.0 - 2.5 DS D Gate threshold V V GS(th) voltage Tr2 V = -10V, I = -1mA -1.0 - -2.5 DS D V I = 1mA, referenced to 25 Tr1 - -3.9 - GS(th) D Gate threshold voltage mV/ temperature coefficient T I = -1mA, referenced to 25 Tr2 - 3.3 - j D V = 10V, I = 6.0A - 18 25 GS D Tr1 V = 4.5V, I = 6.0A - 24 34 GS D V = 4.0V, I = 6.0A - 26 37 GS D Static drain - source *4 R m DS(on) on - state resistance V = -10V, I = -4.0A - 33 46 GS D Tr2 V = -4.5V, I = -4.0A - 43 60 GS D V = -4.0V, I = -4.0A - 47 65 GS D Tr1 - 2.8 - R Gate resistance f=1MHz, open drain G Tr2 - 3.4 - Tr1 V = 10V, I = 6.0A 6.0 - - DS D Forward Transfer *4 Y S fs Admittance V = -10V, I = -4.0A Tr2 6.0 - - DS D *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a Cu board (40400.8mm) *4 Pulsed www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 2/19 20180712 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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