SP8M51FRA Datasheet 100V Nch+Pch Power MOSFET llOutline Tr1:Nch Tr2:Pch Symbol V 100V -100V DSS SOP8 R (Max.) 170m 290m DS(on) I 3.0A 2.5A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Basic ordering unit (pcs) 2500 Taping code TB Marking SP8M51 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Pch V Drain - Source voltage 100 -100 V DSS I Continuous drain current 3.0 2.5 A D *1 I Pulsed drain current 12 10 A DP V Gate - Source voltage 20 20 V GSS *2 P 2.0 D Power dissipation total W *3 P 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/19 20161221 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. SP8M51FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 thJA Thermal resistance, junction - ambient total /W *3 R - - 89.2 thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. V = 0V, I = 1mA Tr1 100 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = -1mA -100 - - GS D V I = 1mA, referenced to 25 (BR)DSS Tr1 D - 116.9 - Breakdown voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 D - -91.3 - Tr1 V = 100V, V = 0V - - 1 DS GS Zero gate voltage I A DSS drain current Tr2 V = -100V, V = 0V - - -1 DS GS Tr1 V = 0V, V = 20V - - 10 DS GS Gate - Source I A GSS leakage current Tr2 V = 0V, V = 20V - - 10 DS GS Tr1 V = 10V, I = 1mA 1.0 - 2.5 DS D Gate threshold V V GS(th) voltage Tr2 V = -10V, I = -1mA -1.0 - -2.5 DS D V I = 1mA, referenced to 25 Tr1 - -3.6 - GS(th) D Gate threshold voltage mV/ temperature coefficient T I = -1mA, referenced to 25 Tr2 - 3.0 - j D V = 10V, I = 3.0A - 120 170 GS D Tr1 V = 4.5V, I = 3.0A - 130 180 GS D V = 4.0V, I = 3.0A - 135 190 GS D Static drain - source *4 R m DS(on) on - state resistance V = -10V, I = -2.5A - 210 290 GS D Tr2 V = -4.5V, I = -1.25A - 230 320 GS D V = -4.0V, I = -1.25A - 240 340 GS D Tr1 - 6.9 - R Gate resistance f=1MHz, open drain G Tr2 - 6.8 - Tr1 V = 10V, I = 3.0A 3.5 - - DS D Forward Transfer *4 Y S fs Admittance V = -10V, I = -2.5A Tr2 3.5 - - DS D *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/19 20161221 - Rev.001