TM V = 1000V IXFK24N100F HiPerRF DSS I = 24A IXFX24N100F Power MOSFETs D25 R 390m F-Class: MegaHertz Switching DS(on) t 250ns rr N-Channel Enhancement Mode Avalanche Rated, Low Q , Low g TM PLUS 247 (IXFX) Intrinsic R , High dV/dt, Low t g rr Symbol Test Conditions Maximum Ratings G (TAB) D V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS TO-264 AA (IXFK) V Continuous 20 V GSS V Transient 30 V GSM I T = 25C24A D25 C I T = 25C, Pulse Width Limited by T 96 A DM C JM G I T = 25C24A D A C (TAB) S E T = 25C3J AS C G = Gate D = Drain dV/dt I I , di/dt < 100A/ s, V V 15 V/ns S DM DD DSS S = Source TAB = Drain T 150C, R = 2 J G P T = 25C 560 W D C Features T -55 ... +150 C J z T 150 C RF capable MOSFETs JM z T -55 ... +150 C Double metal process for low gate stg resistive T 1.6mm (0.062 in.) from Case for 10s 300 C L z Avalanche rated T Plastic Body for 10s 260 C SOLD z Low package inductance M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. z d Fast intrinsic rectifier F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Applications Weight TO-264 10 g PLUS247 6 g z DC-DC converters z Switched-mode and resonant-mode power supplies, >500kHz switching z DC choppers Symbol Test Conditions Characteristic Values z 13.5 MHz industrial applications (T = 25C Unless Otherwise Specified) Min. Typ. Max. J z Pulse generation z BV V = 0V, I = 1mA 1000 V Laser drivers DSS GS D z RF amplifiers V V = V , I = 8mA 3.0 5.5 V GS(th) DS GS D Advantages I V = 20V, V = 0V 200 nA GSS GS DS z TM PLUS 247 package for clip or spring I V = V , V = 0V 100 A DSS DS DSS GS mounting T = 125C 3 mA J z Space savings R V = 10V, I = 0.5 I , Note 1 390 m z DS(on) GS D D25 High power density 2002 IXYS CORPORATION, All Rights Reserved DS98874B(09/02)IXFK24N100F IXFX24N100F Symbol Test Conditions Characteristic Values TM PLUS247 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 16 24 S fs DS D D25 C 6600 pF iss C V = 0V, V = 25V, f = 1MHz 760 pF oss GS DS C 230 pF rss t 22 ns d(on) Resistive Switching Times t 18 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 52 ns d(off) R = 1 (External) G t 11 ns f Terminals: 1 - Gate 2 - Drain (Collector) Q 195 nC g(on) 3 - Source (Emitter) 4 - Drain (Collector) Q V = 10V, V = 0.5 V , I = 0.5 I 40 nC gs GS DS DSS D D25 Dim. Millimeter Inches Q 100 nC gd Min. Max. Min. Max. R 0.21 C/W A 4.83 5.21 .190 .205 thJC A 2.29 2.54 .090 .100 1 R 0.15 C/W A 1.91 2.16 .075 .085 thCK 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 Source-Drain Diode Characteristic Values D 20.80 21.34 .819 .840 T = 25C Unless Otherwise Specified) Min. Typ. Max. E 15.75 16.13 .620 .635 J e 5.45 BSC .215 BSC I V = 0V 24 A L 19.81 20.32 .780 .800 S GS L1 3.81 4.32 .150 .170 I Repetitive, Pulse Width Limited by T 96 A SM JM Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 V I = I , V = 0V, Note 1 1.5 V SD F S GS TO-264 AA Outline t 250 ns rr I = 24A, -di/dt = 100A/s F Q 1.4 C RM V = 100V, V = 0V R GS I 10 A RM Note: 1. Pulse test, t 300 s, duty cycle d 2 % Millimeter Inches Dim. Min. Max. Min. Max. A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537