SP8M6FRATB ROHM

SP8M6 SP8M6FRA Transistors AEC-Q101 Qualified 4V Drive Nch+Pch MOSFET SP8M6 FRA Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Packaging specifications Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 SP8M6FRA 2 2 (1) (2) (3) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate 1 1 (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (1) (2) (3) (4) (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain 1 ESD PROTECTION DIODE (8) Tr1 (Nch) Drain 2 BODY DIODE A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Absolute maximum ratings (Ta=25 C) Limits Parameter Symbol Unit Nchannel Pchannel Drain-source voltage VDSS 30 30 V Gate-source voltage VGSS 20 20 V I 5.0 3.5 A Continuous D Drain current 1 20 14 A Pulsed IDP Source current Continuous IS 1.6 1.6 A 1 (Body diode) Pulsed I 20 14 A SP 2 P 2 W Total power dissipation D 150 C Channel temperature Tch Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 MOUNTED ON A CERAMIC BOARD. Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 62.5 C / W MOUNTED ON A CERAMIC BOARD. Rev.C 1/5SP8M6 SP8M6FRA Transistors N-ch Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 V ID=1mA, VGS=0V Zero gate voltage drain current IDSS 1 A VDS=30V, VGS=0V Gate threshold voltage V 1.0 2.5 V V =10V, I =1mA GS (th) DS D 36 51 ID=5.0A, VGS=10V Static drain-source on-state RDS (on) 52 73 m ID=5.0A, VGS=4.5V resistance 58 82 I =5.0A, V =4V D GS Forward transfer admittance Yfs 3.0 S ID=5.0A, VDS=10V Input capacitance Ciss 230 pF VDS=10V Output capacitance Coss 80 pF VGS=0V Reverse transfer capacitance C 50 pF f=1MHz rss Turn-on delay time td (on) 6 ns ID=2.5A, VDD 15V Rise time tr 8 ns VGS=10V Turn-off delay time t 22 ns R =6.0 d (off) L ns =10 Fall time tf 5 RG Total gate charge Qg 3.9 nC VDD 15V Gate-source charge Qgs 1.1 nC VGS=5V Gate-drain charge Q 1.4 nC I =5.0A gd D Pulsed Body diode characteristics (Source-Drain) (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=6.4A, VGS=0V Pulsed Rev.C 2/5