X-On Electronics has gained recognition as a prominent supplier of IPD30N06S4L23ATMA2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD30N06S4L23ATMA2 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPD30N06S4L23ATMA2 Infineon

IPD30N06S4L23ATMA2 electronic component of Infineon
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Part No.IPD30N06S4L23ATMA2
Manufacturer: Infineon
Category: MOSFETs
Description: 60V 30A 23mO@10V,30A 36W N Channel TO-252 MOSFETs ROHS
Datasheet: IPD30N06S4L23ATMA2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7682 ea
Line Total: USD 0.77 
Availability - 8297
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2309
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6219
10 : USD 0.6123
25 : USD 0.6027
100 : USD 0.5932
250 : USD 0.5836
500 : USD 0.5739
1000 : USD 0.5643

8297
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7682
10 : USD 0.6107
100 : USD 0.4841
500 : USD 0.4105
1000 : USD 0.4048
2500 : USD 0.3795
10000 : USD 0.3554

2309
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 14
Multiples : 1
14 : USD 0.5643

2415
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 86
Multiples : 1
86 : USD 0.4761
100 : USD 0.4745
500 : USD 0.4663
1000 : USD 0.4647

4850
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.4277
5000 : USD 0.4104
10000 : USD 0.4098
15000 : USD 0.4059

   
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We are delighted to provide the IPD30N06S4L23ATMA2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD30N06S4L23ATMA2 and other electronic components in the MOSFETs category and beyond.

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IPD30N06S4L-23 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 23 m DS(on),max I 30 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD30N06S4L-23 PG-TO252-3-11 4N06L23 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continuous drain current 30 A D C GS 1) 21 T =100C, V =10V C GS 1) I T =25C 120 Pulsed drain current D,pulse C 1) E I =15A 18 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 30 A AS Gate source voltage V - 16 V GS Power dissipation P T =25C 36 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2009-03-23 IPD30N06S4L-23 Parameter Symbol Conditions Values Unit min. typ. max. 1) Thermal characteristics Thermal resistance, junction - case R - - - 4.2 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 ) -- 40 6 cm cooling area2 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =V , I =10A Gate threshold voltage 1.2 1.7 2.2 GS(th) DS GS D V =60V, V =0V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25C j V =60V, V =0V, DS GS - 5 100 2) T =125C j I V =16V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =4.5V, I =15A Drain-source on-state resistance -27 40 m DS(on) GS D V =10V, I =30A -18 23 GS D Rev. 1.0 page 2 2009-03-23

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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