X-On Electronics has gained recognition as a prominent supplier of SP8M4FRATB MOSFETs across the USA, India, Europe, Australia, and various other global locations. SP8M4FRATB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SP8M4FRATB ROHM

SP8M4FRATB electronic component of ROHM
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See Product Specifications
Part No.SP8M4FRATB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch+Pch 30V Vds 9A 0.017Rds(on) 15Qg
Datasheet: SP8M4FRATB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.438 ea
Line Total: USD 2.44 
Availability - 944
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
944
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 2.438
10 : USD 2.116
100 : USD 1.7825
250 : USD 1.7135
500 : USD 1.6445
1000 : USD 1.564
2500 : USD 1.265
5000 : USD 1.219
10000 : USD 1.2075

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SP8M4FRATB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SP8M4FRATB and other electronic components in the MOSFETs category and beyond.

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SP8M4FRA Datasheet 30V Nch+Pch Power MOSFET llOutline Tr1:Nch Tr2:Pch Symbol V 30V -30V DSS SOP8 R (Max.) 18m 28m DS(on) I 9.0A 7.0A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance. 2) Small Surface Mount Package (SOP8). 3) Pb-free lead plating RoHS compliant. 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Basic ordering unit (pcs) 2500 Taping code TB Marking SP8M4 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Pch V Drain - Source voltage 30 -30 V DSS I Continuous drain current 9.0 7.0 A D *1 I Pulsed drain current 36 28 A DP V Gate - Source voltage 20 20 V GSS *2 P 2.0 D Power dissipation total W *3 P 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/19 20161019 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. SP8M4FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 thJA Thermal resistance, junction - ambient total /W *3 R - - 89.2 thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. V = 0V, I = 1mA Tr1 30 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = -1mA -30 - - GS D V I = 1mA, referenced to 25 (BR)DSS Tr1 D - 29.0 - Breakdown voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 D - -20.7 - Tr1 V = 30V, V = 0V - - 1 DS GS Zero gate voltage I A DSS drain current Tr2 V = -30V, V = 0V - - -1 DS GS Tr1 V = 0V, V = 20V - - 10 DS GS Gate - Source I A GSS leakage current Tr2 V = 0V, V = 20V - - 10 DS GS Tr1 V = 10V, I = 1mA 1.0 - 2.5 DS D Gate threshold V V GS(th) voltage Tr2 V = -10V, I = -1mA -1.0 - -2.5 DS D V I = 1mA, referenced to 25 Tr1 - -1.6 - GS(th) D Gate threshold voltage mV/ temperature coefficient T I = -1mA, referenced to 25 Tr2 - 3.1 - j D V = 10V, I = 9A - 12 18 GS D Tr1 V = 4.5V, I = 9A - 16 24 GS D V = 4.0V, I = 9A - 17 25 GS D Static drain - source *4 R m DS(on) on - state resistance V = -10V, I = -7A - 20 28 GS D Tr2 V = -4.5V, I = -3.5A - 25 35 GS D V = -4.0V, I = -3.5A - 30 42 GS D Tr1 - 2.9 - R Gate resistance f=1MHz, open drain G Tr2 - 3.7 - Tr1 V = 10V, I = 9A 7.0 - - DS D Forward Transfer *4 Y S fs Admittance V = -10V, I = -3.5A Tr2 6.0 - - DS D *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/19 20161019 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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