RD3T100CN Datasheet Nch 200V 10A Power MOSFET llOutline V 200V DSS DPAK R (Max.) 182m DS(on) TO-252 I 10A D P 85W D llInner circuit llFeatures 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Power Supply Quantity (pcs) 2500 Taping code TL1 Marking RD3T100CN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 200 V DSS *1 T = 25C I 10 A c D Continuous drain current *1 T = 100C I 5.4 A c D *2 I Pulsed drain current 40 A DP V Gate - Source voltage 30 V GSS *3 E Avalanche energy, single pulse 7.35 mJ AS *3 I Avalanche current, single pulse 5 A AS Power dissipation (T = 25C) P 85 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.003 RD3T100CN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 1.46 /W thJC T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 200 - - V (BR)DSS GS D voltage V = 200V, V = 0V DS GS Zero gate voltage I A DSS drain current T = 25C - - 10 j I Gate - Source leakage current V = 30V, V = 0V - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.25 - 5.25 V GS(th) DS D Static drain - source *4 R V = 10V, I = 5A - 140 182 m DS(on) GS D on - state resistance Forward Transfer *4 Y V = 10V, I = 5A 2.1 4.2 - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 500H, V = 50V, R = 25, starting T = 25C DD G j *4 Pulsed www.rohm.com 2/11 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.