X-On Electronics has gained recognition as a prominent supplier of RDD023N50TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RDD023N50TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RDD023N50TL ROHM

RDD023N50TL electronic component of ROHM
RDD023N50TL ROHM
RDD023N50TL MOSFETs
RDD023N50TL  Semiconductors

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See Product Specifications
Part No. RDD023N50TL
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 500V 2A 3-Pin(2+Tab) CPT T/R
Datasheet: RDD023N50TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
116: USD 0.5419 ea
Line Total: USD 62.86 
Availability - 2395
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ: 116  Multiples: 1
Pack Size: 1
Availability Price Quantity
2425
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 139
Multiples : 1
139 : USD 0.7412
250 : USD 0.7115
500 : USD 0.6858
1000 : USD 0.6378
2500 : USD 0.619

2395
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 116
Multiples : 1
116 : USD 0.5419
200 : USD 0.5256
500 : USD 0.5055
1000 : USD 0.4679

   
Manufacturer
Product Category
Packaging
Channel Mode
Continuous Drain Current
Operating Temperature Classification
Operating Temp Range
Package Type
Number Of Elements
Mounting
Pin Count
Gate-Source Voltage Max
Rad Hardened
Polarity
Type
Drain-Source On-Volt
Power Dissipation
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We are delighted to provide the RDD023N50TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RDD023N50TL and other electronic components in the MOSFETs category and beyond.

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RDD023N50 Nch 500V 2A Power MOSFET Datasheet l Outline V 500V DSS CPT3 (SC-63) R (Max.) 5.4W DS(on) (SOT-428) I 2A (1) D (2) (3) P 20W D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (V ) guaranteed to be 30V. GSS 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packaging Taping Reel size (mm) 330 Tape width (mm) 16 lApplication Type Basic ordering unit (pcs) 2,500 Switching Power Supply Taping code TL Marking 023N50 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 500 V DSS *1 T = 25C I 2 A c D Continuous drain current *1 T = 100C 0.9 A I c D *2 Pulsed drain current I 8 A D,pulse V Gate - Source voltage 20 V GSS *3 Avalanche energy, single pulse 21 mJ E AS *4 Avalanche energy, repetitive E 1.48 mJ AR *3 Avalanche current I 2.0 A AR Power dissipation (T = 25C) P 20 W c D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.A 1/13Data Sheet RDD023N50 lAbsolute maximum ratings Parameter Symbol Conditions Values Unit V =400V, I = 2A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 6.25 C/W thJC Thermal resistance, junction - ambient R - - 100 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 500 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 2A - 580 - V (BR)DS GS D breakdown voltage V = 500V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 mA DSS j drain current T = 125C - - 1000 j Gate - Source leakage current I V = 20V, V = 0V - - 25 mA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.0 V GS (th) DS D V = 10V, I = 1A GS D T = 25C - 4.0 5.4 j Static drain - source *6 T = 125C R - 8.24 - W j DS(on) on - state resistance V = 4V, ID = 1A GS - 4.1 5.5 T = 25C j Gate input resistance R f = 1MHz, open drain - 5.5 - W G www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.A 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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