RDD023N50 Nch 500V 2A Power MOSFET Datasheet l Outline V 500V DSS CPT3 (SC-63) R (Max.) 5.4W DS(on) (SOT-428) I 2A (1) D (2) (3) P 20W D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (V ) guaranteed to be 30V. GSS 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packaging Taping Reel size (mm) 330 Tape width (mm) 16 lApplication Type Basic ordering unit (pcs) 2,500 Switching Power Supply Taping code TL Marking 023N50 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 500 V DSS *1 T = 25C I 2 A c D Continuous drain current *1 T = 100C 0.9 A I c D *2 Pulsed drain current I 8 A D,pulse V Gate - Source voltage 20 V GSS *3 Avalanche energy, single pulse 21 mJ E AS *4 Avalanche energy, repetitive E 1.48 mJ AR *3 Avalanche current I 2.0 A AR Power dissipation (T = 25C) P 20 W c D T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg *5 Reverse diode dv/dt 15 V/ns dv/dt www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.A 1/13Data Sheet RDD023N50 lAbsolute maximum ratings Parameter Symbol Conditions Values Unit V =400V, I = 2A DS D Drain - Source voltage slope dv/dt 50 V/ns T = 125C j lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - - 6.25 C/W thJC Thermal resistance, junction - ambient R - - 100 C/W thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 500 - - V (BR)DSS GS D voltage Drain - Source avalanche V V = 0V, I = 2A - 580 - V (BR)DS GS D breakdown voltage V = 500V, V = 0V DS GS Zero gate voltage I T = 25C - - 100 mA DSS j drain current T = 125C - - 1000 j Gate - Source leakage current I V = 20V, V = 0V - - 25 mA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.0 V GS (th) DS D V = 10V, I = 1A GS D T = 25C - 4.0 5.4 j Static drain - source *6 T = 125C R - 8.24 - W j DS(on) on - state resistance V = 4V, ID = 1A GS - 4.1 5.5 T = 25C j Gate input resistance R f = 1MHz, open drain - 5.5 - W G www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.04 - Rev.A 2/13