X-On Electronics has gained recognition as a prominent supplier of RE1E002SPTCL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RE1E002SPTCL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RE1E002SPTCL ROHM

RE1E002SPTCL electronic component of ROHM
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See Product Specifications
Part No.RE1E002SPTCL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 4V Drive Pch MOSFET Drive Pch
Datasheet: RE1E002SPTCL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1851 ea
Line Total: USD 0.19 
Availability - 8669
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1407
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ : 10
Multiples : 10
10 : USD 0.0722
100 : USD 0.0591
300 : USD 0.0526
3000 : USD 0.0478
6000 : USD 0.0437
9000 : USD 0.0419

8669
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1851
10 : USD 0.1242
100 : USD 0.0644
1000 : USD 0.0586
3000 : USD 0.0471
9000 : USD 0.0402
24000 : USD 0.0391
45000 : USD 0.038
99000 : USD 0.0368

164815
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 321
Multiples : 1
321 : USD 0.1267
500 : USD 0.1157
1000 : USD 0.0885
2000 : USD 0.084
3000 : USD 0.0747
6000 : USD 0.0712
12000 : USD 0.0591

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Series
Brand
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RE1E002SPTCL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RE1E002SPTCL and other electronic components in the MOSFETs category and beyond.

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RE1E002SP Datasheet Pch -30V -250mA Small Signal MOSFET llOutline SOT-416FL V -30V DSS SC-89 R (Max.) 1.4 DS(on) EMT3F I 250mA D P 150mW D llFeatures llInner circuit 1) Drive circuits can be simple. 2) Built-in G-S Protection Diode. 3) AEC-Q101 Qualified. llApplication llPackaging specifications Embossed Switching Packing Tape Reel size (mm) 180 Tape width (mm) 8 Type Quantity (pcs) 3000 Taping code TCL Marking WP llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 250 mA D *1 I Pulsed drain current 500 mA DP Gate - Source voltage V 20 V GSS *2 P Power dissipation 150 mW D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/10 2020 ROHM Co., Ltd. All rights reserved. 20200518 - Rev.003 RE1E002SP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 Thermal resistance, junction - ambient R - - 833 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -20.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.1 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -250mA - 0.9 1.4 GS D V = -4.5V, I = -150mA - 1.4 2.1 GS D Static drain - source *3 R V = -4V, I = -150mA - 1.6 2.4 DS(on) GS D on - state resistance V = -10V, I = -250mA GS D - 1.2 1.7 T = 125 j Forward Transfer *3 Y V = -10V, I = -150mA 200 - - mS fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20200518 - Rev.003 2020 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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