Super Fast Recovery Diode RF01VM2S Data Sheet lSerise lDimensions (Unit : mm) lLand Size Figure (Unit : mm) +0.10 1.250.10 0.10 -0.05 Standard Fast Recovery 0.9 lApplications General rectification 00.1 UMD2 lFeatures Cathode 1) Small mold type (UMD2) +0.20 lStructure 0.70 -0.10 0.300.05 ROHM : UMD2 2) High speed switching JEDEC : SOD-323 dot (year,week,day,factory) Anode lConstruction lTaping Dimensions (Unit : mm) Silicon epitaxial planar type +0.1 f1.5 -0 +0.2 f1.0 -0 lAbsolute Maximum Ratings (T = 25C) a Parameter Symbol Conditions Limits Unit V Duty0.5 250 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 250 V R I Repetitive peak forward current - 300 mA FM 60Hz half sin wave , Resistive load Average current I 100 mA o 60Hz half sin wave ,Non-repetitive at T =25C Non-repetitive forward surge current I j 1 A FSM T Operating junction temperature - 150 C j T - Storage temperature -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage V I =100mA - 1 1.2 V F F V =250V I Reverse current - 0.01 10 mA R R Reverse recovery time trr V =6V, I =10mA,R =50W Irr=0.1I - 10 50 ns R F L R www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 1/4 1.700.10 2.500.20 0.40.1 0.60.1 0.8 2.1 Data Sheet RF01VM2S lElectrical Characteristic Curves 1000 1 T = 125 C T = 150 C j j 100 0.1 T = 75 C j 10 T = 150 C j 0.01 T = 25 C T = 125 C j j 1 T = 75 C j T = 25 C j 0.001 0.1 0 50 100 150 200 250 0 200 400 600 800 1000 1200 1400 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 10 10 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 1 1 T = 25 C j 0.1 0.1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM