RF101L2STE25 ROHM

Data Sheet Fast Recovery Diode RF101L2S Land size figure (Unit : mm) Applications Dimensions (Unit : mm) General rectification 2.0 2.60.2 Features 1)Small power mold type. (PMDS) 2)Ultra low V F 6 6 3)Ultra high switching speed 0.10.02 4)Low switching loss 0.1 PMDS 2.00.2 1.50.2 Construction Silicon epitaxial Structure ROHM : PMDS JEDEC : SOD-106 Manufacture date Taping dimensions (Unit : mm) 2.00.05 4.00.1 1.550.05 0.3 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive) V 200 V RM Reverse voltage (DC) V 200 V R Average rectified forward current (*1) 1 Io A Forward current surge peak (60Hz1cyc) I 20 A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C (*1)Mounted on epoxy board. 180Half sine wave Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions V Forward voltage - 0.815 0.87 V I =1.0A F F Reverse current I - 0.01 10 AV =200V R R Reverse recovery time trr - 12 25 ns I =0.5A,I =1A,Irr=0.25*I F R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.B 4.50.2 1.20.3 5.00.3 5.30.1 0.05 9.50.1 5.50.05 2.0 1.750.1 120.2 4.2RF101L2S Data Sheet 100 Ta=150 1 10000 Ta=125 f=1MHz f=1MHz 1000 Ta=150 Ta=75 0.1 100 Ta=125 Ta=25 10 10 Ta=75 Ta=-25 1 0.01 Ta=25 0.1 Ta=-25 0.01 0.001 1 0 50 100 150 200 0 100 200 300 400 500 600 700 800 900 0 5 10 15 20 25 30 FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 100 850 100 Ta=25 Ta=25 Ta=25 90 90 VR=200V f=1MHz IF=1A 80 n=30pcs 80 840 VR=0V n=30pcs n=10pcs 70 70 60 830 60 50 50 40 820 40 AVE:11.1nA 30 30 AVE:37.0pF 20 810 20 AVE:818.6mV 10 10 0 800 0 IR DISPERSION MAP Ct DISPERSION MAP VF DISPERSION MAP 200 30 1000 Ta=25 Ifsm IF=0.5A 25 Ifsm 1cyc IR=1A 150 Irr=0.25*IR 8.3ms 8.3ms 20 8.3ms n=10pcs 100 1cyc 100 15 10 10 AVE:12.2ns 50 AVE:63.0A 5 0 0 1 1 10 100 trr DISPERSION MAP IFSM DISRESION MAP NUMBER OF CYCLES Mounted on epoxy board IFSM-CYCLE CHARACTERISTICS IM=10mA IF=100mA 1000 1000 2 Ifsm Rth(j-a) time 1m t DC 300u 1.5 100 D=1/2 100 Rth(j-c) Sin(180) 1 10 10 0.5 1 0 0.1 1 0 0.511.52 0.001 0.01 0.1 1 10 100 1000 1 10 100 TIME:t(ms) TIME:t(s) AVERAGE RECTIFIED IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.B PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) TRANSIENT REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD POWER TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) DISSIPATION:Pf(W)