X-On Electronics has gained recognition as a prominent supplier of RFN20NS4STL Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFN20NS4STL Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFN20NS4STL ROHM

Hot RFN20NS4STL electronic component of ROHM
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See Product Specifications
Part No.RFN20NS4STL
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching DIODE-RECTIFIER
Datasheet: RFN20NS4STL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
23: USD 2.2204 ea
Line Total: USD 51.07 
Availability - 2019
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 23  Multiples: 1
Pack Size: 1

 RFN20NS4STL More Buying Options & Price Grid(s)

Availability Price Quantity
1566
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 3.4624
10 : USD 2.3619
100 : USD 1.7446
500 : USD 1.4628
1000 : USD 1.3957
2000 : USD 1.3313
25000 : USD 1.3299

2019
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 23
Multiples : 1
23 : USD 2.2204
50 : USD 2.0816
105 : USD 0.4738
200 : USD 0.3212
500 : USD 0.106
1000 : USD 0.1029
2000 : USD 0.0306

801
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 118
Multiples : 1
118 : USD 4.0878
500 : USD 2.7931

Specifications

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFN20NS4STL from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN20NS4STL and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFN20NS4S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Standard Fast Recovery Applications RFN20 NS4S General rectification Features LPDS 1)Low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Construction Manufacture Date Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 430 V RM Reverse voltage V Direct voltage 430 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=30C 20 Io A (*1) Forward current surge peak I 100 60Hz half sin wave , Non-repetitive at Tj=25C A FSM Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) 1-3pin common circuit Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =20A 1.3 1.55 Forward voltage F F V V =430V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 22 30 ns F R R Thermal resistance Rth(j-c) Junction to case 3.0 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFN20NS4S 100 100000 Tj=150 C 10000 Tj=125 C 10 1000 Tj=75 C Tj=150 C 100 1 Tj=125 C Tj=25 C Tj=75 C 10 Tj=25 C 0.1 1 0 500 1000 1500 2000 2500 0 50 100 150 200 250 300 350 400 450 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 1350 100 1340 I =20A F V =430V R Tj=25 C Tj=25 C 1330 1320 1310 1300 10 1290 AVE:15.7nA 1280 AVE:1298mV 1270 1260 1250 1 V DISPERSION MAP I DISPERSION MAP R F 1000 300 f=1MHz 295 f=1MHz V =0V 290 R Tj=25 C 285 100 280 275 270 265 260 10 AVE:268pF 255 250 245 1 240 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) Ct DISPERSION MAP R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) TERMINALS:Ct(pF) F FORWARD CURRENT:I (A) F CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) REVERSE CURRENT:I (nA) R R

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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