X-On Electronics has gained recognition as a prominent supplier of RFN2L6STE25 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFN2L6STE25 Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFN2L6STE25 ROHM

RFN2L6STE25 electronic component of ROHM
RFN2L6STE25 ROHM
RFN2L6STE25 Diodes - General Purpose, Power, Switching
RFN2L6STE25  Semiconductors

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See Product Specifications
Part No. RFN2L6STE25
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching Fast Recovery Diodes
Datasheet: RFN2L6STE25 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.4953 ea
Line Total: USD 2.48 
Availability - 145
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
145
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ : 5
Multiples : 5
5 : USD 0.4953
50 : USD 0.3307
150 : USD 0.2615
1500 : USD 0.2164
3000 : USD 0.1964
4500 : USD 0.1844

1192
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 304
Multiples : 1
304 : USD 1.6631

50506
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 354
Multiples : 1
354 : USD 0.2241
500 : USD 0.2083
1000 : USD 0.2022
1500 : USD 0.2003
3000 : USD 0.1983
6000 : USD 0.1932
12000 : USD 0.187

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Brand
Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFN2L6STE25 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN2L6STE25 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFN2L6S Data Sheet lSeries lDimensions (Unit : mm) lLand Size Figure (Unit : mm) 2.0 Standard Fast Recovery lApplication 6 6 7 9 General rectification 1 2 PMDS lFeatures Cathode 1) Low forward voltage lStructure 2) Low switching loss ROHM : PMDS JEDEC : SOD-106 1 2 : Manufacture Date Anode lConstruction lTaping Dimensions (Unit : mm) 2.00.05 Silicon epitaxial planar type 4.00.1 0.3 f 1.550.05 f 1.55 2.90.1 4.00.1 2.8MAX lAbsolute Maximum Ratings (T = 25C) l Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 600 V R On glass epoxy substrate, T =89C I l Average current 1.5 A o 60Hz half sin wave , Resistive load I 60Hz half sin wave, Non-repetitive at T =25C Non-repetitive forward surge current j 40 A FSM Operating junction temperature T - 150 C j T - Storage temperature -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage V I =1.5A - 1.2 1.55 V F F I V =600V Reverse current - 0.01 1 mA R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 16 35 ns F R R R (j-l) Thermal resistance Junction to Lead - - 23 C/W th www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.07 - Rev.A 1/4 5.30.1 0.05 9.50.1 5.50.05 1.750.1 2.0 120.2 4.2 Data Sheet RFN2L6S lElectrical Characteristic Curves 10 10000 T = 125 C j T = 150 C j 1 1000 T = 75 C j 0.1 100 T = 150 C j T = 25 C j T = 125 C j 0.01 10 T = 75 C j T = 25 C j 0.001 1 0 200 400 600 800 10001200140016001800 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 1000 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.07 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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