Product Information

RFN2L6STE25

RFN2L6STE25 electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching Fast Recovery Diodes
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

188: USD 0.2162 ea
Line Total: USD 40.65

52548 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 188  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
417 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5
5 : USD 0.3762
50 : USD 0.3001
150 : USD 0.2675
1500 : USD 0.2268
3000 : USD 0.2087
4500 : USD 0.1978

1226 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 269
Multiples : 1
269 : USD 0.3789
500 : USD 0.3653
1000 : USD 0.3535

52548 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 188
Multiples : 1
188 : USD 0.2162
200 : USD 0.2145
500 : USD 0.1804
1000 : USD 0.1707
3000 : USD 0.1625
6000 : USD 0.1551
12000 : USD 0.1466

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Packaging
Brand
Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RFN2L6S Data Sheet lSeries lDimensions (Unit : mm) lLand Size Figure (Unit : mm) 2.0 Standard Fast Recovery lApplication 6 6 7 9 General rectification 1 2 PMDS lFeatures Cathode 1) Low forward voltage lStructure 2) Low switching loss ROHM : PMDS JEDEC : SOD-106 1 2 : Manufacture Date Anode lConstruction lTaping Dimensions (Unit : mm) 2.00.05 Silicon epitaxial planar type 4.00.1 0.3 f 1.550.05 f 1.55 2.90.1 4.00.1 2.8MAX lAbsolute Maximum Ratings (T = 25C) l Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 600 V R On glass epoxy substrate, T =89C I l Average current 1.5 A o 60Hz half sin wave , Resistive load I 60Hz half sin wave, Non-repetitive at T =25C Non-repetitive forward surge current j 40 A FSM Operating junction temperature T - 150 C j T - Storage temperature -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage V I =1.5A - 1.2 1.55 V F F I V =600V Reverse current - 0.01 1 mA R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 16 35 ns F R R R (j-l) Thermal resistance Junction to Lead - - 23 C/W th www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.07 - Rev.A 1/4 5.30.1 0.05 9.50.1 5.50.05 1.750.1 2.0 120.2 4.2 Data Sheet RFN2L6S lElectrical Characteristic Curves 10 10000 T = 125 C j T = 150 C j 1 1000 T = 75 C j 0.1 100 T = 150 C j T = 25 C j T = 125 C j 0.01 10 T = 75 C j T = 25 C j 0.001 1 0 200 400 600 800 10001200140016001800 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 1000 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.07 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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