RFN30TS6DGC11 ROHM

Super Fast Recovery Diode RFN30TS6D Data Sheet lSerise lDimensions (Unit : mm) lStructure Standard Fast Recovery lApplication General rectification RFN30 TS6D 1 2 lFeatures 1) Low switching loss Low forward voltage 2) 3) High current overload capacity lConstruction ROHM : TO247 Silicon epitaxial planar type 1 : Manufacture Year 2 : Manufacture Week lAbsolute maximum ratings (T = 25C) a Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 600 V RM V Direct voltage 600 Reverse voltage V R 60Hz half sin wave, Resistive load, I Average current 30 A o 1/2I per diode o 60Hz half sin wave, Non-repetitive Non-repetitive forward surge current I 120 A FSM at T =25C, per diode j T - 150 Operating junction temperature C j T - Storage temperature -55 to +150 C stg lElectrical characteristics (T = 25C, per diode) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =15A Forward voltage 1.0 1.25 1.55 V F F V =600V Reverse current I - 0.05 10 R mA R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr - 30 55 ns F R R Thermal resistance R Junction to case - - 0.7 C / W th(j-c) www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.06 - Rev.A 1/4Data Sheet RFN30TS6D lElectrical characteristic curves 100 100000 Tj = 150 C 10000 10 1000 Tj = 125 C 1 Tj = 150 C 100 Tj = 125 C Tj = 75 C 0.1 Tj = 75 C 10 Tj = 25 C Tj = 25 C per diode per diode 0.01 1 0 500 1000 1500 2000 2500 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz T = 25 C j T = 25 C a per diode per diode 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 10 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM