CMH07(TE12L,Q,M) Toshiba

CMH07 TOSHIBA High-Efficiency Diode (HED) Silicon Epitaxial Type CMH07 Radio-Frequency Rectification in Switching Regulators Unit: mm Repetitive peak reverse voltage : V = 200 V RRM Average forward current : I = 2.0 A F (AV) Peak forward voltage : V = 0.98 V (max) FM Very Fast Reverse-Recovery Time : trr = 35 ns (max) Suitable for high-density board assembly due to the use of a small TM Toshiba Nickname: M FLAT Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 200 V RRM 1 ANODE Average forward current I 2.0 (Note1) A F (AV) 2 CATHODE Non-repetitive peak forward surge current I 40 (50 Hz) A FSM Junction temperature T 40 to 150 C j JEDEC Storage temperature range T 40 to 150 C stg JEITA Note 1: Ta = 35C Device mounted on a ceramic board TOSHIBA 3-4E1S board size : 50 mm 50 mm Soldering land size : 2 mm 2 mm Weight: 0.023 g (typ.) board thickness : 0.64 mm Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this prouct to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit VFM (1) IFM = 0.1 A (pulse test) 0.68 Peak forward voltage V I = 1.0 A (pulse test) 0.83 V FM (2) FM V I = 2.0 A (pulse test) 0.91 0.98 FM (3) FM Peak repetitive reverse current I V = 200 V (pulse test) 10 A RRM RRM Reverse recovery time t I = 1 A, di/dt = 30 A/s 35 ns rr F Forward recovery time t I = 1 A 100 ns fr F Device mounted on a ceramic board board size 50 mm 50 mm 60 soldering land size 2 mm 2 mm board thickness 0.64 mm Device mounted on a glass-epoxy board Thermal resistance board size 50 mm 50 mm R 135 C/W th (j-a) (junction to ambient) soldering land size 6 mm 6 mm board thickness 1.6 mm Device mounted on a glass-epoxy board board size 50 mm 50 mm 210 soldering land size 2.1 mm 1.4 mm board thickness 1.6 mm Thermal resistance R 16 C/W th (j-) (junction to lead) Start of commercial production 2002-12 1 2018-11-15 CMH07 Marking Abbreviation Code Part No. H7 CMH07 Land pattern dimensions for reference only Unit: mm 1.4 3.0 1.4 Handling Precaution 1) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. V : We recommend that the worst case voltage, including surge voltage, be no greater than 80% of the absolute RRM maximum rating of V for a DC circuit and be no greater than 50% of that of V for an AC circuit. RRM RRM V has a temperature coefficient of 0.1%/C. Take this temperature coefficient into account designing a RRM device at low temperature. I : We recommend that the worst case current be no greater than 80% of the absolute maximum rating of I . F(AV) F(AV) Carry out adequate heat design. If you cant design a circuit with excellent heat radiation, set the margin by using an allowable Ta max - I curve. F(AV) I : This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which FSM seldom occurs during the lifespan of the device. Tj : We recommend that a device be used at a T of below 120C under the worst load and heat radiation j conditions. 2) Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. 3) For other design considerations, see the Toshiba website. 2 2018-11-15 2.1