X-On Electronics has gained recognition as a prominent supplier of CMS03(TE12L,Q,M) Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. CMS03(TE12L,Q,M) Schottky Diodes & Rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

CMS03(TE12L,Q,M) Toshiba

CMS03(TE12L,Q,M) electronic component of Toshiba
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Part No.CMS03(TE12L,Q,M)
Manufacturer: Toshiba
Category: Schottky Diodes & Rectifiers
Description: Toshiba Schottky Diodes & Rectifiers Diode Schottky 30V, 3A
Datasheet: CMS03(TE12L,Q,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
468: USD 0.218 ea
Line Total: USD 102.02 
Availability - 2407
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 468  Multiples: 1
Pack Size: 1
Availability Price Quantity
2407
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 468
Multiples : 1
468 : USD 0.218
500 : USD 0.2102
1000 : USD 0.2033

23650
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 47
Multiples : 1
47 : USD 0.8743
59 : USD 0.689
100 : USD 0.4745
200 : USD 0.4728
500 : USD 0.377
1000 : USD 0.3429
3000 : USD 0.3007
6000 : USD 0.273
12000 : USD 0.2665
24000 : USD 0.26

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Height
Length
Operating Temperature Range
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CMS03(TE12L,Q,M) from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMS03(TE12L,Q,M) and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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CMS03 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS03 Switching Mode Power Supply Applications Unit: mm Portable Equipment Battery Applications Repetitive peak reverse voltage : V = 30 V RRM Average forward current : I = 3 A F (AV) Peak forward voltage : V = 0.45 V (max) FM Suitable for compact assembly due to small surface-mount package TM M FLAT (Toshiba package name) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 30 V RRM Average forward current I 3 (Note 1) A F (AV) Non-repetitive peak forward surge current I 40 (50 Hz) A FSM Junction temperature T 40 to 150 C j Storage temperature T 40 to 150 C stg Note 1: T = 117.6C Rectangular waveform ( = 180), V = 15 V R Ta = 28.4C Device mounted on a ceramic board JEDEC Board size : 50 mm 50 mm JEITA Soldering land size : 2 mm 2 mm Board thickness : 0 .64 mm TOSHIBA 3-4E1A Note 2: Using continuously under heavy loads (e.g. the application of Weight: 0.023 g (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 0.5 A (pulse test) 0.35 FM (1) FM Peak forward voltage V I = 1 A (pulse test) 0.37 V FM (2) FM V I = 3 A (pulse test) 0.42 0.45 FM (3) FM I V = 5 V (pulse test) 3 RRM (1) RRM Repetitive peak reverse current A I V = 30 V (pulse test) 30 500 RRM (2) RRM Junction capacitance C V = 10 V, f = 1 MHz 190 pF j R Device mounted on a ceramic board board size : 50 m 5m0 mm 60 soldering land size : 2 mm 2 mm board thickness : 0.64 mm Thermal resistance(junction to ambient) R th (j-a) Device mounted on a glass-epoxy board C/W board size : 50 m 5m0 mm 135 soldering land size : 6 mm 6 mm board thickness : 1.6 mm Thermal resistance (junction to lead) R 16 th (j-) Start of commercial production 2000-07 1 2018-04-04 CMS03 Marking Abbreviation Code Part No. S3 CMS03 Land pattern dimensions for reference only Unit: mm 1.4 3.0 1.4 Handling Precaution 1) Schottky barrier diodes (SBDs) have reverse current greater than other types of diodes. This makes SBDs more vulnerable to damage due to thermal runaway under high-temperature and high-voltage conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and safety design. 2) The absolute maximum ratings are rated values that must not be exceeded during operation, even for an instant. The following are the recommended general derating methods for designing a circuit board using this device. VRRM : Use this rating with reference to 1) above. VRRM has a temperature coefficient of 0.1%/ at low temperatures. Take this coefficient into account when designing a circuit board that will be operated in a low-temperature environment. IF(AV) : We recommend that the worst-case current be no greater than 80% of the absolute maximum rating of IF(AV) and that the worst-case junction temperature, Tj, be kept below 120. When using this device, allow margins, referring to the Ta(max)-IF(AV) curve. IFSM : This rating specifies peak non-repetitive forward surge current. This only applies to an abnormal operation, which seldom occurs during the lifespan of a device. Tj : Derate device parameters in proportion to this rating in order to ensure high reliability. We recommend that the junction temperature (Tj) of a device be kept below 120 . 3) Thermal resistance (junction-to-ambient) varies with the mounting conditions of a device on a circuit board. An appropriate thermal resistance value should be used, considering the heatsink, circuit board design and land pattern dimensions (provided for reference only). 4) For other design considerations, see the Rectifiers databook or the Toshiba website. 2 2018-04-04 2.1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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