X-On Electronics has gained recognition as a prominent supplier of CMS08(TE12L,Q,M) Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. CMS08(TE12L,Q,M) Schottky Diodes & Rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

CMS08(TE12L,Q,M) Toshiba

CMS08(TE12L,Q,M) electronic component of Toshiba
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Part No.CMS08(TE12L,Q,M)
Manufacturer: Toshiba
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 30V 1A M-FLAT
Datasheet: CMS08(TE12L,Q,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.464 ea
Line Total: USD 1.46 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.464
10 : USD 0.6614
100 : USD 0.3284
500 : USD 0.2458
1000 : USD 0.1851
3000 : USD 0.1694

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Diode Capacitance
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CMS08(TE12L,Q,M) from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMS08(TE12L,Q,M) and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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CMS08 TOSHIBA Schottky Barrier Diode CMS08 DC-DC Converters Unit: mm Radio-Frequency Rectification in Switching Regulators Reverse-Current Protection in Mobile Devices Repetitive peak reverse voltage : V = 30 V RRM Average forward current : I = 1.0 A F (AV) Peak forward voltage : V = 0.37 V (max) FM Suitable for high-density board assembly due to the use of a small TM Toshiba Nickname: M FLAT Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit 1 ANODE Repetitive peak reverse voltage V 30 V RRM 2 CATHODE Average forward current 1.0 (Note 1) A I F (AV) Non-repetitive peak forward surge current I 25 (50 Hz) A FSM Junction temperature T 40 to 125 C j JEDEC Storage temperature T 40 to 150 C stg JEITA Note 1: T = 106C Rectangular waveform : = 180, VR = 15 V TOSHIBA 3-4E1S Ta = 51C Device mounted on a ceramic board board size : 50 mm 50 mm Weight: 0.023 g (typ.) soldering land size : 2 mm 2 mm board thickness : 0.64 mm Rectangular waveform : = 180, VR = 15 V Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 0.1 A (pulse test) 0.23 FM (1) FM Peak forward voltage V I = 0.5 A (pulse test) 0.29 V FM (2) FM V I = 1.0 A (pulse test) 0.32 0.37 FM (3) FM I V = 5 V (pulse test) 0.04 RRM (1) RRM Repetitive peak reverse current mA I V = 30 V (pulse test) 0.38 1.5 RRM (2) RRM Junction capacitance C V = 10 V, f = 1.0 MHz 70 pF j R Device mounted on a ceramic board board size 50 mm 50 mm 60 soldering land size 2 mm 2 mm board thickness 0.64 mm Thermal resistance R C/W th (j-a) (junction to ambient) Device mounted on a glass-epoxy board board size 50 mm 50 mm 135 soldering land size 6 mm 6 mm board thickness 1.6 mm Thermal resistance (junction to lead) R 16 C/W th (j-) Start of commercial production 2000-07 1 2019-03-07 CMS08 Marking Abbreviation Code Part No. S8 CMS08 Land pattern dimensions for reference only Unit: mm 1.4 3.0 1.4 Usage Considerations 1) Schottky barrier diodes have reverse current characteristic compared to the other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. This device is V -I trade-off type, lower V higher I therefore, thermal runaway might occur when voltage is F RRM F RRM applied. Please take forward and reverse loss into consideration during design. 2) The absolute maximum ratings are rated values that must not be exceeded for a moment to have you use an element safely. Please refer to each following absolute maximum ratings on the occasion of use and design. V : V has a temperature coefficient of 0.1 %/. RRM RRM Please take this coefficient into account when designing a circuit board that will be operated in a low-temperature environment. I : We recommend that the current be in less than 80 % of rating and the junction temperature (T ) F(AV) j be in less than 80 % of absolute maximum rating under the worst condition. This rating is based on the premise that the device is radiating heat enough. Therefore, when enough heat radiation is not expected, please consider the margin to the permission curve of T - I for using the device. a(max) F(AV) I : This rating specifies a non-repetitive limit value. FSM This only applies to an abnormal operation, which seldom occurs during the lifespan of a device. T : Derate device parameters in proportion to this rating in order to ensure high reliability. j We recommend that the junction temperature (T ) of a device be kept below 80 %. j 3) Thermal resistance (junction-to-ambient) varies with the mounting conditions of the device on the circuit board. An appropriate thermal resistance value that should be used, must be considering the circuit board design and soldering land size. 4) For other design considerations, see the Toshiba website. 2 2019-03-07 2.1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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