CMS10I40A Schottky Barrier Diode CMS10I40ACMS10I40ACMS10I40ACMS10I40A 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Secondary Rectification in Switching Regulators Reverse-Current Protection in Mobile Devices 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Peak forward voltage: V = 0.45 V (max) I = 1 A FM FM (2) Average forward current: I = 1 A F(AV) (3) Repetitive peak reverse voltage: V = 40 V RRM (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: M-FLATTM 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Anode 2: Cathode 3-4E1S 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage V 40 V RRM Average forward current I (Note 1) 1 A F(AV) Non-repetitive peak forward surge current I (Note 2) 25 FSM Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: T = 132 , square wave ( = 180), V = 20 V R Note 2: f = 50 Hz, half-sine wave Start of commercial production 2010-10 2014-04-14 1 Rev.1.0CMS10I40A 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Note Test Condition Max Unit Thermal resistance (junction-to-ambient) R Device mounted on a ceramic board 60 /W th(j-a) (board size: 50 mm 50 mm) (soldering land size: 2 mm 2 mm) (board thickness: 0.64 mm) Device mounted on a glass-epoxy board 135 (board size: 50 mm 50 mm) (soldering land size: 6 mm 6 mm) (board thickness: 1.6 mm) Thermal resistance (junction-to-lead) R Junction to cathode lead 16 /W th(j-) 6. 6. 6. 6. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Test Condition Min Typ. Max Unit Peak forward voltage V I = 0.1 A (pulse measurement) 0.26 V FM(1) FM V I = 0.7 A (pulse measurement) 0.34 FM(2) FM V I = 1.0 A (pulse measurement) 0.37 0.45 FM(3) FM Repetitive peak reverse current I V = 5 V (pulse measurement) 8 A RRM(1) RRM I V = 40 V (pulse measurement) 17 100 RRM(2) RRM Junction capacitance C V = 10 V, f = 1 MHz 62 pF j R 7. 7. MarkingMarking 7. 7. MarkingMarking Fig. Fig. Fig. Fig. 7.17.17.17.1 MarkingMarkingMarkingMarking Marking Code Part Number ST CMS10I40A 2014-04-14 2 Rev.1.0