X-On Electronics has gained recognition as a prominent supplier of CMS11(TE12L,Q,M) Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. CMS11(TE12L,Q,M) Schottky Diodes & Rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

CMS11(TE12L,Q,M) Toshiba

CMS11(TE12L,Q,M) electronic component of Toshiba
CMS11(TE12L,Q,M) Toshiba
CMS11(TE12L,Q,M) Schottky Diodes & Rectifiers
CMS11(TE12L,Q,M)  Semiconductors

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See Product Specifications
Part No. CMS11(TE12L,Q,M)
Manufacturer: Toshiba
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Diode Schottky 40V 2A
Datasheet: CMS11(TE12L,Q,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.434 ea
Line Total: USD 2.17 
Availability - 2900
Ship by Mon. 03 Feb to Thu. 06 Feb
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
428
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 442
Multiples : 1
442 : USD 0.2748
500 : USD 0.2341
1000 : USD 0.1972

217
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 224
Multiples : 1
224 : USD 0.3887

2900
Ship by Mon. 03 Feb to Thu. 06 Feb
MOQ : 5
Multiples : 5
5 : USD 0.434
50 : USD 0.3155
150 : USD 0.2639
500 : USD 0.199
2500 : USD 0.1703
5000 : USD 0.1531

428
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 237
Multiples : 1
237 : USD 0.2748

376
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 388
Multiples : 1
388 : USD 0.2628

217
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 167
Multiples : 1
167 : USD 0.3887

2599
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 65
Multiples : 1
65 : USD 0.9978
99 : USD 0.655
139 : USD 0.468
200 : USD 0.4648
500 : USD 0.3282
1000 : USD 0.3072

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Operating Temperature Range
Width
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CMS11(TE12L,Q,M) from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMS11(TE12L,Q,M) and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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CMS11 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS11 Switching Mode Power Supply Applications Unit: mm Portable Equipment Battery Applications Forward voltage: V = 0.55 V (max) FM Average forward current: I = 2.0 A F (AV) Repetitive peak reverse voltage: V = 40 V RRM Suitable for compact assembly due to small surface-mount package TM M FLAT (Toshiba package name) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 40 V RRM I 2.0 F (AV) (Note 1) (Ta = 34C) Average forward current A 2.0 I F (AV) (T = 119C) Peak one cycle surge forward current I 30 (50 Hz) A FSM (non-repetitive) Junction temperature T 40~150 C j JEDEC Storage temperature T 40~150 C stg JEITA Note 1: Device mounted on a ceramic board TOSHIBA 3-4E1A (board size: 50 mm 50 mm, soldering land: 2 mm 2 mm) Weight: 0.023 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit V I = 0.5 A 0.38 FM (1) FM Peak forward voltage V I = 1.0 A 0.42 V FM (2) FM V I = 2.0 A 0.49 0.55 FM (3) FM V = 5.0 V 2.0 RRM Repetitive peak reverse current I A RRM V = 40 V 20.0 500 RRM Junction capacitance C V = 10 V, f = 1.0 MHz 95 pF j R Device mounted on a ceramic board 60 (soldering land: 2 mm 2 mm) R th (j-a) Device mounted on a glass-epoxy Thermal resistance C/W board 135 (soldering land: 6 mm 6 mm) R 16 th (j-) Start of commercial production 2000-07 1 2013-11-01 CMS11 Marking Abbreviation Code Part No. SA CMS11 Standard Soldering Pad Unit: mm 1.4 3.0 1.4 Handling Precaution Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. V : Use this rating with reference to the above. V has a temperature coefficient of 0.1%/C. Take RRM RRM this temperature coefficient into account designing a device at low temperature. I : We recommend that the worst case current be no greater than 80% of the absolute maximum rating F(AV) of I and T be below 120C. When using this device, take the margin into consideration by F(AV) j using an allowable Tamax-I curve. F(AV) I : This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, FSM which seldom occurs during the lifespan of the device. T : Derate this rating when using a device in order to ensure high reliability. We recommend that the j device be used at a T of below 120C. j Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. Please refer to the Rectifiers databook for further information. 2 2013-11-01 2.1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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