RFN2L4STE25 ROHM

Data Sheet Super Fast Recovery Diode RFN2L4S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Standard Fast Recovery 2.0 Applications General rectification 8 7 PMDS Features 1)Small power mold type(PMDS) 2)Low switching loss Structure 3)Low forward voltage ROHM : PMDS JEDEC : SOD-106 Manufacture Date Construction Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolute Maximum Ratings(Tl=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 400 V RM Reverse voltage V Direct voltage 400 V R On glass epoxy substrate, Average rectified foward current Io Tl=107C 1.5 A 60Hz half sin wave , Resistive load Forward current surge peak I 60Hz half sin wave , Non-repetitive at Tj=25C 50 A FSM Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit I =1.5A Forward voltage V F 0.88 1.2 V F I V =400V 0.01 1 Reverse current R A R I =0.5A,I =1A,Irr=0.25I 22 30 Reverse recovery time trr F R R ns Junction to lead 23 Thermal resistance Rth(j-l) C W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A 2.0 4.2 Data Sheet RFN2L4S 100 100000 Tj=150 C 10000 Tj=125 C 10 1000 Tj=150 C Tj=75 C Tj=125 C 100 Tj=75 C 1 Tj=25 C Tj=25 C 10 0.1 1 0 200 400 600 800 1000 1200 1400 1600 1800 0 100 200 300 400 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 960 1000 I =1.5A V =400V F R 940 Tj=25 C Tj=25 C 920 900 880 100 AVE:23.3nA 860 AVE:878mV 840 820 800 10 V DISPERSION MAP I DISPERSION MAP R F 1000 100 f=1MHz f=1MHz 95 V =0V R 90 Tj=25 C 85 100 80 AVE:67.5pF 75 70 10 65 60 55 50 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) Ct DISPERSION MAP R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) F F CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) REVERSE CURRENT:I (nA) R R