RF04UA2DTR ROHM

Data Sheet Super Fast Recovery Diode RF04UA2D Series Dimensions (Unit : mm) Land size figure (Unit : mm) Standard Fast Recovery 1.9 0.95 0.95 Applications High frequency rectification 0.45 0.35 0.35 0.45 Features 0.7 0.8 1)Surface mounting type (TSMD6) TSMD6 2)High reliability Structure (6) (5) (4) Construction Silicon epitaxial planer (1) (2) (3) Taping dimensions (Unit : mm) 1.550.1 4.00.1 2.00.05 0 0.30.1 1.10.1 3.20.08 4.00.1 1.10.08 Absolute maximum ratings (Ta=25C) Parameter Conditions Limits Unit Symbol Repetitive peak Reverse voltage V 200 V RM Reverse voltage V Direct voltage 200 V R Glass epoxy substrate mounted Ta=25C Average rectified forward current Io/2 0.4 A 60Hz half sin wave,resistive load Tc=130C 60Hz half sin wave, Non-repetitive I Forward current surge peak 1 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature -40 to +150 C Tstg (* Standard of per diode) Electrical characteristics (Tj=25C) Parameter Symbol Conditions Min.Typ. Max. Unit I =0.2A Forward voltage V F 0.86 0.98 V F V =200V Reverse current I R 0.01 10 A R I =0.5A,I =1A,Irr=0.25I F R R 11 25 Reverse recovery time trr ns www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.A 1.0 min. 3.20.08 5.50.2 00.5 3.50.05 1.750.1 8.00.2 2.4 3.20.08Data Sheet RF04UA2D Electrical characteristics curves 10 100 10 000 f=1MHz Tj=150 C Tj=150 C 1 000 Tj=125 C Tj=125 C 1 100 Tj=75 C 10 10 Tj=25 C Tj=25 C 0.1 Tj=75 C 1 0 0.01 1 0 50 100 150 200 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (V) R R F V -I CHARACTERISTICS V -Ct CHARACTERISTICS V -I CHARACTERISTICS R R R F F 880 1000 30 Tj=25 C Tj=25 C Tj=25 C I =0.2A F V =200V R f=1MHz 870 n=30pcs n=30pcs V =0V 100 R n=10pcs 20 AVE:10 .9 pF 860 AVE:1.3nA 10 850 10 1 840 AVE : 851.3mV 0.1 0 830 V DISPERSION MAP Ct DISPERSION MAP F I DISPERSION MAP R 30 30 1000 Tj=25 C 25 1cyc Ifsm I =0.5A Ifsm F I =1A R Irr=0.25I 20 R 8.3ms 8.3ms 20 8.3ms 100 n=10pcs 1cyc AVE:10.2ns 15 AVE:10.2A 10 10 10 5 0 0 1 I DISRESION MAP FSM 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES I -CYCLE CHARACTERISTICS FSM 1000 10000 30 AVE : 21.9kV IM=10mA I =1A F Ifsm 25 t 1000 1ms time 100 20 Rth(j-a) 300s 15 100 AVE : 3.9kV Rth(j-c) 10 10 10 5 On glass-epoxy board 0 1 1 C= 20 0pF C =100pF 1 10 100 0.001 0.01 0.1 1 10 100 1000 R=0 R =1.5k TIME : t(ms) TIME : t(s) I -t CHARACTERISTICS FSM ESD DISPERSION MAP Rth-t CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.A PEAK SURGE PEAK SURGE FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) F FSM FORWARD CURRENT : I (A) FORWARD CURRENT : IF(A) FSM ELECTROSTATIC DISCHARGE TEST ESD(KV) REVERSE CURRENT : I (nA) REVERSE CURRENT : I (nA) R REVERSE RECOVERY TIME : trr(ns) R CAPACITANCE BETWEEN PEAK SURGE CAPACITANCE BETWEEN TERMINALS : TRANSIENT TERMINALS : Ct(pF) FORWARD CURRENT : I (A) Ct(pF) FSM THAERMAL IMPEDANCE : Rth (C/W)