RFN16T2D ROHM

Data Sheet Super Fast Recovery Diode RFN16T2D Applications Dimensions (Unit : mm) Structure General rectification 4.50.3 0.1 2.80.2 10.00.3 0.1 Features 0.1 1)Cathode common Dual type. (TO-220) 2)Low V F 3)Low switching loss RFN16 Construction T2D Silicon epitaxial planer 1.2 1.3 0.8 (1) (2) (3) 0.70.1 2.60.5 0.05 ROHM : TO220FN dot (year week factory) Absolute maximum ratings (Tc=25 C) Parameter Conditions Symbol Limits Unit Repetitive peak reverse voltage V Duty0.5 200 V RM Reverse voltage V Direct voltage 200 V R 60Hz half sin wave, Resistance load, Average rectified forward current Io Tc=100C 16 A 1/2Io at per diode 60Hz half sin wave, Non-repetitive I Forward current surge peak 100 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature C Tstg 55 to 150 Electrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit I =8A Forward voltage V 0.90 0.98 V F F Reverse current I V =200V 0.01 10 A R R Reverse recovery time I =0.5A,I =1A,Irr=0.25I trr F R R 16 30 ns Thermal Resistance Rth(j-c) junction to case 2.5 C/W * per diode www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.A 1/4 Not Recommended for New Designs 5.00.2 8.00.2 12.00.2 14.00.5 13.5MIN 15.00.4 0.2 8.0Data Sheet RFN16T2D 100 10000 Tj=150 C Tj=125 C 10 Tj=125 C 1000 Tj=150 C 1 Tj=75 C Tj=25 C 100 0.1 Tj=75 C Tj=25 C 10 0.01 per diode per diode 0.001 1 0 500 1000 1500 0 50 100 150 200 REVERSE VOLTAGEV (V) FORWARD VOLTAGEV (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 1000 1000 f=1MHz Tj=25 C Tj=25 C I =8A F n=20pcs 950 per diode 100 900 AVE:894.5mV 850 per diode 10 800 0 5 10 15 20 25 30 V DISPERSION MAP REVERSE VOLTAGE:V (V) F R V -Ct CHARACTERISTICS R 100 240 Tj=25 C Ta=25 C f=1MHz V =200V R n=20pcs V =0V R per diode n=10pcs per diode 220 AVE:221.5pF 10 200 AVE:14.2nA 1 180 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.A 2/4 Not Recommended for New Designs REVERSE CURRENT:I (nA) R CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) REVERSE CURRENT:I (nA) R F TERMINALS:Ct(pF)