X-On Electronics has gained recognition as a prominent supplier of RFN16T2D Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFN16T2D Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFN16T2D ROHM

Name: RFN16T2D
Brand: ROHM
SKU: RFN16T2D_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RFN16T2D Diodes - General Purpose, Power, Switching

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See Product Specifications

Part No.	RFN16T2D
Manufacturer:	ROHM
Category:	Diodes - General Purpose, Power, Switching
Description:	Diode Switching 200V 16A 3-Pin(3+Tab) TO-220FN Bulk
Datasheet:	RFN16T2D Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

99: USD 0.9933 ea
Line Total: USD 98.34

Availability - 0

MOQ: 99 Multiples: 100
Pack Size: 100

RFN16T2D More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 10 Jan to Thu. 16 Jan MOQ : 99 Multiples : 100	99 : USD 0.9933

Specifications

Manufacturer ROHM ROHM
Product Category Diodes - General Purpose, Power, Switching Diodes - General Purpose, Power, Switching
RoHS - XON 1 1
Product Switching Diode Switching Diode
Mounting Style Through Hole Through Hole
Package / Case TO - 220FN TO - 220FN
Peak Reverse Voltage 200 V 200 V
Max Surge Current 100 A 100 A
Configuration Dual Common Cathode Dual Common Cathode
Vf - Forward Voltage 0.98 V 0.98 V
Brand Rohm Rohm
Operating Temperature Range military military
Rad Hardened No No
Pin Count 3 + Tab 3 + Tab
Rev Recov Time 30 ns 30 ns
Rev Curr 10(Ua) 10(Ua)

We are delighted to provide the RFN16T2D from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN16T2D and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFN16T2D Applications Dimensions (Unit : mm) Structure General rectification 4.50.3 0.1 2.80.2 10.00.3 0.1 Features 0.1 1)Cathode common Dual type. (TO-220) 2)Low V F 3)Low switching loss RFN16 Construction T2D Silicon epitaxial planer 1.2 1.3 0.8 (1) (2) (3) 0.70.1 2.60.5 0.05 ROHM : TO220FN dot (year week factory) Absolute maximum ratings (Tc=25 C) Parameter Conditions Symbol Limits Unit Repetitive peak reverse voltage V Duty0.5 200 V RM Reverse voltage V Direct voltage 200 V R 60Hz half sin wave, Resistance load, Average rectified forward current Io Tc=100C 16 A 1/2Io at per diode 60Hz half sin wave, Non-repetitive I Forward current surge peak 100 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature C Tstg 55 to 150 Electrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit I =8A Forward voltage V 0.90 0.98 V F F Reverse current I V =200V 0.01 10 A R R Reverse recovery time I =0.5A,I =1A,Irr=0.25I trr F R R 16 30 ns Thermal Resistance Rth(j-c) junction to case 2.5 C/W * per diode www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.A 1/4 Not Recommended for New Designs 5.00.2 8.00.2 12.00.2 14.00.5 13.5MIN 15.00.4 0.2 8.0Data Sheet RFN16T2D 100 10000 Tj=150 C Tj=125 C 10 Tj=125 C 1000 Tj=150 C 1 Tj=75 C Tj=25 C 100 0.1 Tj=75 C Tj=25 C 10 0.01 per diode per diode 0.001 1 0 500 1000 1500 0 50 100 150 200 REVERSE VOLTAGEV (V) FORWARD VOLTAGEV (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 1000 1000 f=1MHz Tj=25 C Tj=25 C I =8A F n=20pcs 950 per diode 100 900 AVE:894.5mV 850 per diode 10 800 0 5 10 15 20 25 30 V DISPERSION MAP REVERSE VOLTAGE:V (V) F R V -Ct CHARACTERISTICS R 100 240 Tj=25 C Ta=25 C f=1MHz V =200V R n=20pcs V =0V R per diode n=10pcs per diode 220 AVE:221.5pF 10 200 AVE:14.2nA 1 180 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.A 2/4 Not Recommended for New Designs REVERSE CURRENT:I (nA) R CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) REVERSE CURRENT:I (nA) R F TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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