X-On Electronics has gained recognition as a prominent supplier of RFN1L6STE25 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFN1L6STE25 Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFN1L6STE25 ROHM

RFN1L6STE25 electronic component of ROHM
RFN1L6STE25 ROHM
RFN1L6STE25 Diodes - General Purpose, Power, Switching
RFN1L6STE25  Semiconductors

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See Product Specifications
Part No. RFN1L6STE25
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: ROHM Semiconductor Diodes - General Purpose, Power, Switching Diode Switching 600V 0.8A
Datasheet: RFN1L6STE25 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1512 ea
Line Total: USD 0.76 
Availability - 1484
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1484
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ : 5
Multiples : 5
5 : USD 0.1512
50 : USD 0.148
150 : USD 0.1251
500 : USD 0.111

1276
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 0.6911
10 : USD 0.6831
1500 : USD 0.1437
9000 : USD 0.1342
24000 : USD 0.1275

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFN1L6STE25 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN1L6STE25 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFN1L6S Data Sheet lSeries lDimensions (Unit : mm) lLand Size Figure (Unit : mm) 2.0 Standard Fast Recovery lApplication 6 6 8 4 General rectification 1 2 PMDS lFeatures Cathode 1) Low forward voltage lStructure 2) Low switching loss ROHM : PMDS JEDEC : SOD-106 1 2 : Manufacture Date Anode lConstruction lTaping Dimensions (Unit : mm) 2.00.05 Silicon epitaxial planar type 4.00.1 0.3 f 1.550.05 f 1.55 2.90.1 4.00.1 2.8MAX lAbsolute Maximum Ratings (T = 25C) l Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 600 V R On glass epoxy substrate, T=115C I l Average current 0.8 A o 60Hz half sin wave , Resistive load I 60Hz half sin wave, Non-repetitive at T =25C Non-repetitive forward surge current j 15 A FSM Operating junction temperature T - 150 C j T - Storage temperature -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage V I =0.8A - 1.15 1.45 V F F I V =600V Reverse current - 0.01 1 mA R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 25 35 ns F R R R (j-l) Thermal resistance Junction to Lead - - 23 C/W th www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.07 - Rev.A 1/4 Not Recommended for New Designs 5.30.1 0.05 9.50.1 5.50.05 1.750.1 2.0 120.2 4.2 Data Sheet RFN1L6S lElectrical Characteristic Curves 10 10000 T = 150 C T = 125 C j j 1 1000 T = 75 C j 0.1 100 T = 150 C j T = 25 C T = 125 C j j 0.01 10 T = 75 C j T = 25 C j 0.001 1 0 500 1000 1500 2000 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 100 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.07 - Rev.A 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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