X-On Electronics has gained recognition as a prominent supplier of RFN1L7STE25 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFN1L7STE25 Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFN1L7STE25 ROHM

RFN1L7STE25 electronic component of ROHM
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Part No.RFN1L7STE25
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: ROHM Semiconductor Diodes - General Purpose, Power, Switching Diode Switching 700V 0.8A
Datasheet: RFN1L7STE25 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6469 ea
Line Total: USD 0.65 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6469
10 : USD 0.6375
500 : USD 0.5797
1000 : USD 0.2899
1500 : USD 0.1516
9000 : USD 0.1396
24000 : USD 0.1369
49500 : USD 0.1342

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Operating Temperature Range
Mxhts
Subcategory
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We are delighted to provide the RFN1L7STE25 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN1L7STE25 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Data Sheet Super Fast Recovery Diode RFN1L7S Series Dimensions (Unit : mm) Land size figure (Unit : mm) Standard Fast Recovery 2.0 2.60.2 Applications General rectification 86 65 0.10.02 0.1 PMDS 2.00.2 Features 1.50.2 1)Small power mold type. PMDS Structure 2)Low switching loss ROHM : PMDS 3)Low forward voltage JEDEC : SOD-106 Manufacture date Construction Taping dimensions (Unit : mm) Silicon epitaxial planer 2.00.05 4.00.1 0.3 1.550.05 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings (TI=25 C) Parameter Conditions Symbol Limits Unit Repetitive peak reverse voltage V D0.5 700 V RM Reverse voltage V Direct voltage 700 V R Glass epoxy substrate mounted Average rectified forward current Io Tl=115C 0.8 A R-road, 60Hz half sin wave 60Hz half sin wave, Non-repetitive I Forward current surge peak 15 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C Electrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit I =0.8A Forward voltage V 1.15 1.5 V F F V =700V Reverse current I 0.01 1 A R R Reverse recovery time I =0.5A,I =1A,Irr=0.25I trr 45 80 ns F R R Thermal resistance Rth(j-l) junction to lead 23 C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4 4.50.2 1.20.3 5.00.3 2.0 5.30.1 0.05 9.50.1 5.50.05 1.750.1 120.2 4.2Data Sheet RFN1L7S 10 10000 Tj=150 C 1000 Tj=150 C Tj=125 C 1 Tj=125 C 100 Tj=75 C Tj=75 C 0.1 10 Tj=25 C Tj=25 C 1 0.01 0 100 200 300 400 500 600 700 0 500 1000 1500 2000 2500 FORWARD VOLTAGEV (mV) F REVERSE VOLTAGE V (V) R V -I CHARACTERISTICS F F V -I CHARACTERISTICS R R 1300 100 f=1MHz Tj=25 C 1250 I =0.8A F n=20pcs 1200 1150 10 1100 1050 1000 AVE:1075.5mV 950 1 900 0 5 10 15 20 25 30 V DISPERSION MAP REVERSE VOLTAGE:V (V) F R V -Ct CHARACTERISTICS R 1000 40 Tj=25 C Tj=25 C f=1MHz V =700V 35 R V =0V R n=20pcs n=10pcs 100 30 25 AVE:26.4pF 10 20 AVE:17.3nA 15 1 10 I DISPERSION MAP R Ct DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/4 CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) FORWARD CURRENT:I (A) F R TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F REVERSE CURRENT:I (nA) TERMINALS:Ct(pF) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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