RFN20NS3SFHTL ROHM

Data Sheet Super Fast Recovery Diode RFN20NS3S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Standard Fast Recovery RFN20 Applications NS3S General rectification Features LPDS 1)Low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Manufacture Date Construction Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 350 V RM Reverse voltage V Direct voltage 350 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=71C 20 Io A (*1) Forward current surge peak I 100 60Hz half sin wave , Non-repetitive at Tj=25C A FSM Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) 1-3pin common circuit Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =20A 1.1 1.35 Forward voltage F F V V =350V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 25 35 ns F R R Thermal resistance Rth(j-c) Junction to case 2.5 C W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFN20NS3S 100 100000 Tj=150 C 10000 Tj=125 C 10 1000 Tj=75 C Tj=150 C Tj=125 C 100 Tj=25 C 1 Tj=75 C 10 Tj=25 C 0.1 1 0 200 400 600 800 1000 1200 1400 1600 1800 0 50 100 150 200 250 300 350 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1140 I =20A V =350V F R Tj=25 C 1120 Tj=25 C 1100 100 1080 1060 AVE:33.0nA 10 AVE:1079mV 1040 1020 1 1000 V DISPERSION MAP I DISPERSION MAP F R 1000 450 f=1MHz f=1MHz 440 V =0V R Tj=25 C 430 420 100 410 400 390 AVE:412pF 10 380 370 360 350 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) TERMINALS:Ct(pF) F FORWARD CURRENT:I (A) F REVERSE CURRENT:I (nA) CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R R TERMINALS:Ct(pF)