X-On Electronics has gained recognition as a prominent supplier of RFN20NS3SFHTL Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFN20NS3SFHTL Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFN20NS3SFHTL ROHM

RFN20NS3SFHTL electronic component of ROHM
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See Product Specifications
Part No.RFN20NS3SFHTL
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching Fast Recvry 350V Vr TO-263S 20A Io
Datasheet: RFN20NS3SFHTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4796 ea
Line Total: USD 1.48 
Availability - 1670
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 RFN20NS3SFHTL More Buying Options & Price Grid(s)

Availability Price Quantity
1670
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.4796
10 : USD 1.3133
100 : USD 0.992
500 : USD 0.8328
1000 : USD 0.7722
5000 : USD 0.7412

67
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 70
Multiples : 1
70 : USD 2.0237

998
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 22
Multiples : 1
22 : USD 2.4355
50 : USD 2.2482
100 : USD 1.6528
200 : USD 1.5612
1000 : USD 1.4072

Specifications

   
Manufacturer
Product Category
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Maximum Operating Temperature
Series
Qualification
Packaging
Repetitive Reverse Voltage Vrrm Max
Forward Current If Av
Reverse Recovery Time Trr Max
Forward Surge Current Ifsm Max
No Of Pins
Svhc
Msl
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFN20NS3SFHTL from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN20NS3SFHTL and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFN20NS3S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Standard Fast Recovery RFN20 Applications NS3S General rectification Features LPDS 1)Low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Manufacture Date Construction Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 350 V RM Reverse voltage V Direct voltage 350 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=71C 20 Io A (*1) Forward current surge peak I 100 60Hz half sin wave , Non-repetitive at Tj=25C A FSM Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) 1-3pin common circuit Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =20A 1.1 1.35 Forward voltage F F V V =350V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 25 35 ns F R R Thermal resistance Rth(j-c) Junction to case 2.5 C W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFN20NS3S 100 100000 Tj=150 C 10000 Tj=125 C 10 1000 Tj=75 C Tj=150 C Tj=125 C 100 Tj=25 C 1 Tj=75 C 10 Tj=25 C 0.1 1 0 200 400 600 800 1000 1200 1400 1600 1800 0 50 100 150 200 250 300 350 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1140 I =20A V =350V F R Tj=25 C 1120 Tj=25 C 1100 100 1080 1060 AVE:33.0nA 10 AVE:1079mV 1040 1020 1 1000 V DISPERSION MAP I DISPERSION MAP F R 1000 450 f=1MHz f=1MHz 440 V =0V R Tj=25 C 430 420 100 410 400 390 AVE:412pF 10 380 370 360 350 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) TERMINALS:Ct(pF) F FORWARD CURRENT:I (A) F REVERSE CURRENT:I (nA) CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R R TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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