X-On Electronics has gained recognition as a prominent supplier of RFN10T2D Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFN10T2D Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFN10T2D ROHM

Hot RFN10T2D electronic component of ROHM
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Part No.RFN10T2D
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 200V Vrm 10A Io Recovery Diode
Datasheet: RFN10T2D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
240: USD 0.5247 ea
Line Total: USD 125.93 
Availability - 347
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ: 240  Multiples: 1
Pack Size: 1
Availability Price Quantity
121
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 1.4959
10 : USD 1.1463
100 : USD 0.8622
500 : USD 0.8036
1000 : USD 0.801
2500 : USD 0.7996
10000 : USD 0.7982
25000 : USD 0.7969

347
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 240
Multiples : 1
240 : USD 0.5247
250 : USD 0.5036

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Series
Packaging
Brand
Cnhts
Hts Code
Operating Temperature Range
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFN10T2D from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN10T2D and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Data Sheet Super Fast Recovery Diode RFN10T2D Applications Dimensions (Unit : mm) Structure General rectification 4.50.3 0.1 2.80.2 10.00.3 0.1 0.1 Features 1)Cathode common Dual type. (TO-220) 2)Low V F 3)Low switching loss RFN10 T2D 1.2 Construction Silicon epitaxial planer 1.3 0.8 (1) (2) (3) 0.70.1 2.60.5 0.05 ROHM : TO220FN dot (year week factory) Absolute maximum ratings (Tc=25 C) Parameter Conditions Symbol Limits Unit Repetitive peak reverse voltage V Duty0.5 200 V RM Reverse voltage V Direct voltage 200 V R 60Hz half sin wave, Resistance load, Average rectified forward current Io Tc=122C 10 A 1/2Io at per diode 60Hz half sin wave, Non-repetitive Forward current surge peak I 80 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature Tstg C 55 to 150 Electrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit V I =5A Forward voltage 0.90 0.98 V F F V =200V Reverse current I 0.01 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 15 25 ns F R R junction to case Thermal Resistance Rth(j-c) 2.5 C/W * per diode www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.A 1/4 Not Recommended for New Designs 5.00.2 8.00.2 12.00.2 14.00.5 13.5MIN 15.00.4 0.2 8.0Data Sheet RFN10T2D 100 10000 Tj=150 C 10 Tj=150 C 1000 Tj=125 C 100 1 Tj=125 C Tj=25 C Tj=75 C 0.1 10 Tj=75 C Tj=25 C 0.01 1 0.001 0.1 0 500 1000 1500 0 50 100 150 200 FORWARD VOLTAGEV (mV) F REVERSE VOLTAGEV (V) R V -I CHARACTERISTICS F F V -I CHARACTERISTICS R R 1000 1000 f=1MHz Tj=25 C Tj=25 C I =5A F n=20pcs 950 100 900 10 AVE:887.5mV 850 1 800 0 5 10 15 20 25 30 V DISPERSION MAP F REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 100 150 Ta=25 C Tj=25 C f=1MHz V =200V R V =0V 140 R n=20pcs n=10pcs 130 10 AVE:133.2pF 120 AVE:14.3nA 110 1 100 Ct DISPERSION MAP I DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.A 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) F REVERSE CURRENT:I (nA) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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