X-On Electronics has gained recognition as a prominent supplier of RFN10TB4S Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFN10TB4S Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFN10TB4S ROHM

Name: RFN10TB4S
Brand: ROHM
SKU: RFN10TB4S_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RFN10TB4S Diodes - General Purpose, Power, Switching

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See Product Specifications

Part No.	RFN10TB4S
Manufacturer:	ROHM
Category:	Diodes - General Purpose, Power, Switching
Description:	Diode Switching 430V 10A 2-Pin(2+Tab) TO-220FN Bulk
Datasheet:	RFN10TB4S Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 5.6125 ea
Line Total: USD 112.25

Availability - 0

MOQ: 20 Multiples: 20
Pack Size: 20

RFN10TB4S More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 07 Jan to Mon. 13 Jan MOQ : 20 Multiples : 20	20 : USD 5.6125 60 : USD 5.3406 100 : USD 5.1075 200 : USD 4.7385 500 : USD 4.2725

Specifications

Manufacturer ROHM ROHM
Product Category Diodes - General Purpose, Power, Switching Diodes - General Purpose, Power, Switching
RoHS - XON 1 1
Product Switching Diode Switching Diode
Mounting Style Through Hole Through Hole
Package / Case TO - 220FN TO - 220FN
Max Surge Current 80 A 80 A
Configuration Single Single
Vf - Forward Voltage 1.55 V 1.55 V
Packaging Bulk Bulk
Brand Rohm Semiconductor Rohm Semiconductor
Operating Temperature Range military military
Rev Curr 10(Ua) 10(Ua)
Pin Count 2 + Tab 2 + Tab
Rad Hardened No No
Rev Recov Time 30 ns 30 ns

We are delighted to provide the RFN10TB4S from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN10TB4S and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Additional Infomation About Product

Data Sheet Super Fast Recovery Diode RFN10TB4S Serise Dimensions(Unit : mm) Structure Standard Fast Recovery Applications General rectification Features 1)Low switching loss RFN10T B4S 2)High current overload capacity Construction Silicon epitaxial planer type 2.54 d 0.5 2.54 d 0.5 ROHM : TO220FN Manufacture Year Week Absolu e Maximum Ratings(Tl=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 430 V RM Reverse voltage V Direct voltage 430 V R Average rectified foward current 60Hz Half sin wave , Resistive load Tc=93C 10 Io A Forward current surge peak I 60Hz Half sin wave , Non-repetitive at Tj=25C 80 A FSM Junction temperature 150 Tj r C Storage temperature Tstg 55 to 150 C Electrical Characteristics(Tj=25C) Parameter Conditions Min. Typ. Max. Symbol Unit V I =10A 1.2 1.55 Forward voltage F V F V =430V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 18 30 ns F R R Thermal resistance Rth(j-c) Junction to case 3.0 C W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Not Recommended for New Designs RFN10TB4S Data Sheet 100000 100 Tj=150 C 10000 Tj=125 C 10 1000 Tj=150 C Tj=75 C Tj=125 C 100 Tj=75 C 1 Tj=25 C Tj=25 C 10 0.1 1 0 500 1000 1500 2000 2500 0 50 100 150 200 250 300 350 400 450 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1250 1000 V =430V 1240 I =10A R F Tj=25 C Tj=25 C 1230 1220 100 AVE:1181mV 1210 AVE:11.6nA 1200 1190 10 1180 1170 1160 1150 1 V DISPERSION MAP F I DISPERSION MAP R 200 1000 f=1MHz f=1MHz 190 V =0V R 180 Tj=25 C 170 100 160 150 AVE:157pF 140 10 130 120 110 1 100 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) TERMINALS:Ct(pF) F F CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) REVERSE CURRENT:I (nA) R R

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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