RFN10TF6S ROHM

Data Sheet Super Fast Recovery Diode RFN10TF6S Serise Dimensions(Unit : mm) Structure Standard Fast Recovery Applications General rectification RFN10 TF6S Features 1)Low switching loss 2)High current overload capacity Construction Silicon epitaxial planer type ROHM : TO220NFM Manufacture Year Manufacture Week Absolu e Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=82C 10 Io A Forward current surge peak I 60Hz half sin wave , Non-repetitive at Tj=25C 100 A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical Characteristics(Tj=25C) Parameter Conditions Min. Typ. Max. Symbol Unit V I =10A 1.25 1.55 Forward voltage F V F V =600V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 30 50 ns F R R Thermal resistance Rth(j-c) Junction to case 3.5 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFN10TF6S 100 100000 Tj=150 C 10000 Tj=125 C 10 1000 Tj=75 C Tj=150 C 100 Tj=125 C 1 Tj=25 C Tj=75 C 10 Tj=25 C 0.1 1 0 500 1000 1500 2000 2500 3000 0 100 200 300 400 500 600 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1400 1000 V =600V I =10A R F Tj=25 C 1350 Tj=25 C 1300 AVE:30.5nA 1250 100 1200 AVE:1261mV 1150 1100 10 V DISPERSION MAP F I DISPERSION MAP R 1000 180 f=1MHz f=1MHz 175 V =0V R 170 Tj=25 C 165 100 160 155 AVE:169pF 150 10 145 140 135 1 130 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) Ct DISPERSION MAP R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F FORWARD VOLTAGE:V (mV) TERMINALS:Ct(pF) F CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) R