RF05VA1STR ROHM

Data Sheet Fast Recovery Diode RF05VA1S lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) General rectification 1.1 0.170.1 0.05 1.30.05 lFeatures 1)Small mold type. (TUMD2) 2)Ultra high switching speed 3)Low V F TUMD2 lConstruction Silicon epitaxial planer lStructure 0.80.05 0.60.2 ROHM : TUMD2 0.1 dot (year week factory) + day lTaping dimensions (Unit : mm) 1.550.1 0.250.05 2.00.05 4.00.1 0 4.00.1 1.00.2 1.430.05 0 0.90.08 lAbsolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Reverse voltage (repetitive) V 100 V RM Reverse voltage (DC) V 100 V R Average rectified forward current (*1) Io 0.5 A Forward current surge peak (60Hz1cyc) I 6 A FSM Junction temperature 150 Tj C Storage temperature Tstg -55 to +150 C (*1)On the Glass epoxy substrate lElectrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 0.98 V I =0.5A F F Reverse current I - - 10 A V =100V R R I =0.5A,I =1A,Irr=0.25*I Reverse recovery time trr - - 25 ns F R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4 1.90.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 2.80.05 2.0 0.8 0.5 Data Sheet RF05VA1S 10 1000 Tj=150 C 100 Tj=125 C Tj=150 C 1 Tj=125 C Tj=75 C 10 Tj=25 C 0.1 Tj=25 C 1 Tj=75 C 0 0.01 0 20 40 60 80 100 300 400 500 600 700 800 900 1000 1100 1200 1300 REVERSE VOLTAGEV (V) R FORWARD VOLTAGEV (mV) F V -I CHARACTERISTICS R R V -I CHARACTERISTICS F F 100 850 f=1MHz I =0.5A F 840 830 10 820 AVE:819.3mV 810 1 800 0 10 20 30 V DISPERSION MAP F REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 10 30 f=1MHz Ta=25 C 29 V =0V R V =100V R n=20pcs 28 27 AVE:28.18pF 26 1 25 24 AVE:0.80nA 23 22 21 0.1 20 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT:I (A) REVERSE CURRENT:I (nA) F R TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F REVERSE CURRENT:I (nA) TERMINALS:Ct(pF) R