RF2L6STE25 ROHM

Data Sheet Super Fast Recovery Diode RF2L6S Series Dimensions (Unit : mm) Land size figure (Unit : mm) Standard Fast Recovery 2.0 2.60.2 Applications General rectification 6 6 8 2 0.10.02 0.1 PMDS Features 2.00.2 1.50.2 1)Small power mold type. (PMDS) Structure 2)High switching speed ROHM : PMDS 3)Low forward voltage JEDEC : SOD-106 Manufacture date Construction Silicon epitaxial planar Taping dimensions (Unit : mm) 2.00.05 4.00.1 0.3 1.550.05 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings (Tl=25 C) Parameter Limits Symbol Unit V Repetitive peak Reverse voltage 600 V RM Reverse voltage V 600 V R Average rectified forward Io 1.5 A current(*1) Forward current surge peak I 40 A FSM (60Hz,1cyc,Tj=25 C) Junction temperature Tj 150 C Storage temperature Tstg 55 to 150 C (*1) Half sinwave on the Glass epoxy substrate (size : 50mm50mm),Tc=90 CMax. Electrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit V I =1.5A Forward voltage - 1.25 1.55 V F F V =600V Reverse current I - 0.03 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr - 20 35 ns F R R Thermal Resistance Rth (j-l) junction to lead - - 23 C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.05 - Rev.B 1/3 4.50.2 1.20.3 5.00.3 2.0 5.30.1 0.05 9.50.1 4.2 5.50.05 1.750.1 120.2Data Sheet RF2L6S Electrical characteristics curves 10 10000 1000 Tj=150 f=1MHz 1 1000 Tj=125 Tj=125 100 Tj=75 Tj=150 0.1 100 Tj=25 Tj=25 10 Tj=75 0.01 10 0.001 1 1 0 400 800 1200 1600 0 100 200 300 400 500 600 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) REVERSE VOLTAGEV (V) R FORWARD VOLTAGEV (V) R F V -Ct CHARACTERISTICS V -I CHARACTERISTICS R V -I CHARACTERISTICS R R F F 1300 1000 100 f=1MHz Tj=25 Ta=25 Tj=25 V =0V R I =1.5A V =200V 90 VR=600VR F 1250 n=20pcs n=30pcs n=20pcs 100 80 1200 AVE:87.3pF 70 AVE:1209mV 10 1150 AVE:29.5ns 60 1 50 1100 V DISPERSION MAP I DISPERSION MAP Ct DISPERSION MAP F R 1000 250 30 Tj=25 25 I =0.5A Ifsm F 200 Ifsm 1cyc I =1A R 8.3ms 8.3ms Irr=0.25*I R 100 20 8.3m n=10pcs 1cyc 150 AVE:20.1ns 15 100 10 10 50 AVE:84.5A 5 0 0 1 1 10 100 trr DISPERSION MAP I DISPERSION MAP FSM NUMBER OF CYCLES I -CYCLE CHARACTERISTICS FSM 1000 Mounted on epoxy board 1000 20 IM=10m I =100mA F 18 Ifsm 16 t 100 time 1m 14 Rth(j-a) 300u 12 100 10 10 Rth(j-l) AVE:5.14kV 8 AVE:3.46kV 6 1 4 2 0 10 0.1 C=200pF C=100pF 1 10 100 0.001 0.01 0.1 1 10 100 1000 R=0 R=1.5k TIME:t(ms) TIME:t(s) I -t CHARACTERISTICS FSM ESD DISPERSION MAP Rth-t CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.B PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FSM FORWARD VOLTAGE:V (mV) F FORWARD CURRENT:I (A) FORWARD CURRENT:I (A) F FSM ELECTROSTATIC REVERSE CURRENT:I (nA) R DISCHARGE TEST ESD(KV) REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:I (nA) R CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE TRANSIENT TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:I (A) FSM THAERMAL IMPEDANCE:Rth (/W)