X-On Electronics has gained recognition as a prominent supplier of RF4E060AJTCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RF4E060AJTCR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RF4E060AJTCR ROHM

RF4E060AJTCR electronic component of ROHM
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See Product Specifications
Part No.RF4E060AJTCR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET NCH 30V 6A MIDDLE POWER
Datasheet: RF4E060AJTCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.66 ea
Line Total: USD 0.66 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.299

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 0.7742
10 : USD 0.6532
100 : USD 0.5009
500 : USD 0.396
1000 : USD 0.3168

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 0.7742
10 : USD 0.6532
100 : USD 0.5009
500 : USD 0.396
1000 : USD 0.3168

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.66
10 : USD 0.5676
100 : USD 0.3795
500 : USD 0.3047
1000 : USD 0.2772
3000 : USD 0.231
6000 : USD 0.231
9000 : USD 0.2211

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RF4E060AJTCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RF4E060AJTCR and other electronic components in the MOSFETs category and beyond.

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RF4E060AJ Datasheet Nch 30V 6A Middle Power MOSFET llOutline DFN2020-8S V 30V DSS R (Max.) 37m DS(on) HUML2020L8 I 6.0A D P 2.0W D llInner circuit llFeatures 1) Low on - resistance. 2) High power small mold package (HUML2020L8). 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Quantity (pcs) 3000 Taping code TCR Marking HT llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS I Continuous drain current 6.0 A D *1 I Pulsed drain current 24 A DP V Gate - Source voltage 12 V GSS *2 I Avalanche current, single pulse 2.0 A AS *2 E Avalanche energy, single pulse 3.0 mJ AS *3 P Power dissipation 2.0 W D T Junction temperature 150 j Operating junction and storage temperature range T -55 to +150 stg www.rohm.com 1/11 2019 ROHM Co., Ltd. All rights reserved. 20190527 - Rev.002 RF4E060AJ Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 18 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 12V, V = 0V - - 100 nA GSS GS DS V V = V , I = 1mA Gate threshold voltage 0.5 - 1.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -1.8 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 6.0A - 28 37 GS D Static drain - source *4 R m DS(on) on - state resistance V = 2.5V, I = 3.0A - 41 55 GS D R Gate resistance f=1MHz, open drain - 2.2 - G Forward Transfer *4 Y V = 5.0V, I = 3.0A 3.1 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 L 1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a Cu Board (40400.8mm) *4 Pulsed www.rohm.com 2/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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