X-On Electronics has gained recognition as a prominent supplier of RF4E080GNTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RF4E080GNTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RF4E080GNTR ROHM

RF4E080GNTR electronic component of ROHM
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See Product Specifications
Part No.RF4E080GNTR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
Datasheet: RF4E080GNTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5152 ea
Line Total: USD 0.52 
Availability - 2978
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2978
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5152
10 : USD 0.4105
100 : USD 0.2794
500 : USD 0.222
1000 : USD 0.1966
3000 : USD 0.1691
9000 : USD 0.1564
24000 : USD 0.1518
45000 : USD 0.1495

2900
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.672
10 : USD 0.5376
55 : USD 0.3192
151 : USD 0.3024
500 : USD 0.2912

2567
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 296
Multiples : 1
296 : USD 0.3444
500 : USD 0.3319
1000 : USD 0.3211
2500 : USD 0.3116

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RF4E080GNTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RF4E080GNTR and other electronic components in the MOSFETs category and beyond.

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RF4E080GN Datasheet Nch 30V 8A Middle Power MOSFET llOutline DFN2020-8S V 30V DSS R (Max.) 17.6m DS(on) HUML2020L8 I 8A D P 2W D llInner circuit llFeatures 1) Low on - resistance. 2) High power small mold package (HUML2020L8). 3) Pb-free lead plating RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking HC llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 30 V DSS I Continuous drain current 8 A D *1 I Pulsed drain current 32 A DP V Gate - Source voltage 20 V GSS *2 I Avalanche current, single pulse 2.5 A AS *2 E Avalanche energy, single pulse 2.75 mJ AS *3 P Power dissipation 2 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160212 - Rev.002 RF4E080GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 28 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 100 nA GSS GS DS V V = V , I = 250A Gate threshold voltage 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3.87 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 8A - 13.5 17.6 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 8A - 17.6 31.2 GS D R Gate resistance f=1MHz, open drain - 2.5 - G Forward Transfer *4 Y V = 5V, I = 8A 5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 L 1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *3 Mounted on Cu Board (40400.8mm) *4 Pulsed www.rohm.com 2/10 20160212 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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