X-On Electronics has gained recognition as a prominent supplier of RF4L055GNTCR MOSFET across the USA, India, Europe, Australia, and various other global locations. RF4L055GNTCR MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

RF4L055GNTCR ROHM

RF4L055GNTCR electronic component of ROHM
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See Product Specifications
Part No.RF4L055GNTCR
Manufacturer: ROHM
Category: MOSFET
Description: MOSFET NCH 60V 5.5A POWER
Datasheet: RF4L055GNTCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0294 ea
Line Total: USD 1.03

Availability - 2785
Ship by Tue. 23 Jul to Thu. 25 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2341
Ship by Tue. 23 Jul to Thu. 25 Jul
MOQ : 1
Multiples : 1
1 : USD 0.836
10 : USD 0.6911
100 : USD 0.5531
500 : USD 0.4818
1000 : USD 0.4048
3000 : USD 0.3864
6000 : USD 0.3864
9000 : USD 0.3715
24000 : USD 0.3703

   
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We are delighted to provide the RF4L055GNTCR from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RF4L055GNTCR and other electronic components in the MOSFET category and beyond.

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RF4L055GN Datasheet Nch 60V 5.5A Power MOSFET llOutline DFN2020-8S V 60V DSS R (Max.) 43m DS(on) HUML2020L8 I 5.5A D P 2.0W D llInner circuit llFeatures 1) Low on - resistance 2) High Power small mold Package (HUML2020L8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCR Marking LA llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS I Continuous drain current 5.5 A D *1 I Pulsed drain current 22 A DP V Gate - Source voltage 20 V GSS *2 I Avalanche current, single pulse 3.5 A AS *2 E Avalanche energy, single pulse 9.5 mJ AS *3 P Power dissipation 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/10 20171211 - Rev.001 RF4L055GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 60 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V V = V , I = 1mA Gate threshold voltage 1.3 - 2.7 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -5.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 5.5A - 31 43 GS D Static drain - source *4 R m DS(on) on - state resistance V = 4.5V, I = 5.5A - 43 66 GS D R Gate resistance f=1MHz, open drain - 1.9 - G Forward Transfer *4 Y V = 5V, I = 5.5A 5.0 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 L 2mH, V = 30V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a Cu board (40400.8mm) *4 Pulsed www.rohm.com 2/10 20171211 - Rev.001 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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