1 . Features High Density Cell Design For Low R DS(ON) Voltage Controlled Small Signal Switch High Saturation Current Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 ESD Protected up to 2KV (HBM) Halogen Free. Green Device (Note 1) 026)(7 Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature: -55C to +150C SOT-363 Thermal Resistance: 833C/W Junction to Ambient Parameter Rating Unit Symbol G Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V C GS B Drain Current I 340 mA D Total Power Dissipation P 150 mW D A M H Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K L J D DIMENSIONS &LUFXLW DQG 3LQ 6FKHPDWLF INCHES MM DIM NOTE MIN MAX MIN MAX D1 G2 S2 A 0.006 0.014 0.15 0.35 65 4 B 0.045 0.053 1.15 1.35 6 5 4 C 0.079 0.096 2.00 2.45 D 0.026 0.65 TYP. G 0.047 0.055 1.20 1.40 1 2 3 H 0.071 0.087 1.80 2.20 12 3 J ----- 0.004 ----- 0.10 S1 G1 D2 0DUNLQJ Dot denotes Pin1 K0.031 0.043 0.801.10 L 0.010 0.018 0.26 0.46 M 0.003 0.006 0.08 0.15 68**(67( 62/ (5 3 / <287 Rev.3-4-11192021 1/4 MCCSEMI.COM . 1 & + 11(/ 8 / :ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage V V =0V, I =250A 60 V (BR)DSS GS D (2) V V =V , I =1mA 1.0 2.5 V GS(th) DS GS D Gate-Threshold Voltage Gate-Body Leakage I V =0V, V =20V 10 A GSS DS GS Zero Gate Voltage Drain Current I V =48V, V =0V 1 A DSS DS GS V =10V, I =500mA 5 GS D (2) R Drain-Source On-Resistance DS(on) V =4.5V, I =200mA 5.3 GS D V V =0V, I =300mA Diode Forward Voltage 1.5 V SD GS S V =0V, I =300mA,V =25V, GS S R Q 30 Recovered Charge nC r dls/dt=-100A/s (3) Dynami Characteristics Input Capacitance C 40 iss C V =10V,V =0V, f=1MHz 30 pF Output Capacitance oss DS GS Reverse Transfer Capacitance C 10 rss (3) Switching Characteristics Turn-On Delay Time t 10 d(on) V =50V,V =10V,R =250 , DD GS L R =50,R =50 GS GEN t Turn-Off Delay Time 15 d(off) ns V =0V,I =300mA, GS S t Reverse Recovery Time 30 rr V =25V, dls/dt=-100A/s R Gate-Source Zener Diode BV 21.5 30 Gate-Source Breakdown Voltage I =1mA(Oper Drain) V GSO gs Note: 2. Pulse Test: Pulse Width 300s, Duty Cycle2%. 3. These Parameters Have No Way to Verify. Rev.3-4-11192021 2/4 MCCSEMI.COM . : 1