X-On Electronics has gained recognition as a prominent supplier of FDN359AN MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDN359AN MOSFETs are a product manufactured by Shikues. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDN359AN Shikues

Name: FDN359AN
Brand: Shikues
SKU: FDN359AN_Shikues
Availability: InStock
Rating: 5 (11 reviews)

FDN359AN electronic component of Shikues

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See Product Specifications

Part No.	FDN359AN
Manufacturer:	Shikues
Category:	MOSFETs
Description:	MOSFET N Channel 30V 3A 1.5V @ 250uA 45mO @ 3A,10V SOT-23 RoHS
Datasheet:	FDN359AN Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0675 ea
Line Total: USD 0.68

Availability - 116
Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ: 10 Multiples: 10
Pack Size: 10

FDN359AN More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

116

Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ : 10
Multiples : 10

10 : USD 0.0675
100 : USD 0.0542
300 : USD 0.0474
3000 : USD 0.03
6000 : USD 0.0268
9000 : USD 0.0254

Specifications

Manufacturer

Shikues Shikues

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT - 23 SOT - 23

Brand Category

Shikues Shikues

Fet Type

NChannel NChannel

Drain To Source Voltagevdss

30 V 30 V

Continuous Drain Current Id @ 25°C

3 A 3 A

Vgsth Max @ Id

1.5V @ 250uA 1.5V @ 250uA

Rds On Max @ Id Vgs

45mO @ 3A,10V 45mO @ 3A,10V

Drain Source Voltage Vdss

30 V 30 V

Continuous Drain Current Id

3 A 3 A

Drain Source On Resistance Rdson@Vgs Id

45 mOhms @10V , 3A 45 mOhms @10V , 3A

Power Dissipation Pd

- -

Gate Threshold Voltage Vgsth@Id

1.5 V @250uA 1.5 V @250uA

Type

N Channel N Channel

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We are delighted to provide the FDN359AN from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDN359AN and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The FDN359AN MOSFET N Channel 30V 3A 1.5V @ 250uA 45mO @ 3A,10V SOT-23 RoHS from Shikues is a small-package field-effect transistor (FET) working in the N-channel enhancement mode. This device features 30-volt drain-source breakdown voltage (BVDSS) and 3-amp continuous drain current (ID) over an operating temperature range of -55°C to +125°C. It has a gate-source voltage (VGS) threshold voltage of 1.5V @ 250uA and a low static drain-to-source on-resistance (RDS(ON)) of 45mO@3A, 10V. It is packaged in a surface-mount SOT-23 package, making it ideal for space-constrained applications. This device is treated with a lead-free RoHS finish for added safety and environmental friendliness.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
116 Ship by Tue. 18 Mar to Fri. 21 Mar MOQ : 10 Multiples : 10	10 : USD 0.0675 100 : USD 0.0542 300 : USD 0.0474 3000 : USD 0.03 6000 : USD 0.0268 9000 : USD 0.0254

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