X-On Electronics has gained recognition as a prominent supplier of FDN359AN MOSFET across the USA, India, Europe, Australia, and various other global locations. FDN359AN MOSFET are a product manufactured by Shikues. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

FDN359AN Shikues

FDN359AN electronic component of Shikues
Images are for reference only
See Product Specifications
Part No.FDN359AN
Manufacturer: Shikues
Category: MOSFET
Description: MOSFET N Channel 30V 3A 1.5V @ 250uA 45mO @ 3A,10V SOT-23 RoHS
Datasheet: FDN359AN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0657 ea
Line Total: USD 0.66

Availability - 143
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
143
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ : 10
Multiples : 10
10 : USD 0.0654
100 : USD 0.0541
300 : USD 0.0483
3000 : USD 0.0402
6000 : USD 0.0367
9000 : USD 0.0351

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
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We are delighted to provide the FDN359AN from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDN359AN and other electronic components in the MOSFET category and beyond.

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The FDN359AN MOSFET N Channel 30V 3A 1.5V @ 250uA 45mO @ 3A,10V SOT-23 RoHS from Shikues is a small-package field-effect transistor (FET) working in the N-channel enhancement mode. This device features 30-volt drain-source breakdown voltage (BVDSS) and 3-amp continuous drain current (ID) over an operating temperature range of -55°C to +125°C. It has a gate-source voltage (VGS) threshold voltage of 1.5V @ 250uA and a low static drain-to-source on-resistance (RDS(ON)) of 45mO@3A, 10V. It is packaged in a surface-mount SOT-23 package, making it ideal for space-constrained applications. This device is treated with a lead-free RoHS finish for added safety and environmental friendliness.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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