NTMTS001N06CL Power MOSFET 60 V, 0.81 m , 398.2 A, Single NChannel Features Small Footprint (8x8 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G Power 88 Package, Industry Standard These Devices are PbFree, Halogen Free/BFR Free and are RoHS V R MAX I MAX (BR)DSS DS(ON) D Compliant 0.81 m 10 V 60 V 398.2 A 1.05 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 60 V D (58) DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 398.2 A D C Current R JC T = 100C 281.6 (Notes 1, 3) C Steady G (1) State Power Dissipation T = 25C P 244 W C D R (Note 1) JC T = 100C 122 S (24) C Continuous Drain T = 25C I 56.9 A NCHANNEL MOSFET A D Current R JA T = 100C 40.2 (Notes 1, 2, 3) A Steady State Power Dissipation T = 25C P 5.0 W D A R (Notes 1, 2) JA T = 100C 2.5 A Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 Source Current (Body Diode) I 203.4 A S POWER 88 Single Pulse DraintoSource Avalanche E 887 mJ AS CASE 507AP Energy (I = 30 A) L(pk) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. XXXXXXXX THERMAL RESISTANCE MAXIMUM RATINGS AWLYWW Parameter Symbol Value Unit JunctiontoCase Steady State R 0.614 C/W JC XXX = Device Code JunctiontoAmbient Steady State (Note 2) R 30.1 JA (8 AN characters max) 1. The entire application environment impacts the thermal resistance values shown, A = Assembly Location they are not constants and are only valid for the particular conditions noted. 2 WL = 2digit Wafer Lot Code 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. Y = Year Code 3. Maximum current for pulses as long as 1 second is higher but is dependent WW = Work Week Code on pulse duration and duty cycle. ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: January, 2019 Rev. 1 NTMTS001N06CL/DNTMTS001N06CL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 250 A, ref to 25C 25 (BR)DSS D mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 60 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.2 2.2 V GS(TH) GS DS D Threshold Temperature Coefficient V /T I = 250 A, ref to 25C 5.53 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V I = 50 A 0.73 0.81 m DS(on) GS D DraintoSource On Resistance R V = 4.5 V I = 50 A 0.94 1.05 m DS(on) GS D Forward Transconductance g V =15 V, I = 50 A 275 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 12300 ISS Output Capacitance C 6225 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 130 RSS Total Gate Charge Q V = 10 V, V = 30 V I = 50 A 165 nC G(TOT) GS DS D Total Gate Charge Q 74.3 nC G(TOT) Threshold Gate Charge Q 15.6 G(TH) GatetoSource Charge Q 28.7 V = 4.5 V, V = 30 V I = 50 A nC GS GS DS D GatetoDrain Charge Q 14.7 GD Plateau Voltage V 2.59 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 47.2 d(ON) Rise Time t 25.2 r V = 4.5 V, V = 30 V, GS DS ns I = 50 A, R = 2.5 D G TurnOff Delay Time t 70.7 d(OFF) Fall Time t 23.3 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.77 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.63 J Reverse Recovery Time t 98.9 RR Charge Time t 66.8 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 50 A S Discharge Time t 32.1 b Reverse Recovery Charge Q 229 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2