MOSFET - Power, Single N-Channel, Small Signal 20 V, 220 mA NTNS0K8N021Z Features www.onsemi.com Low Profile Ultra Small Package, XDFN3 (0.62 x 0.42 x 0.4 mm) for Extremely SpaceConstrained Applications 1.5 V Gate Drive V R MAX I Max (BR)DSS DS(on) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1.5 4.5 V Compliant 220 mA 20 V 3.3 1.8 V Applications 8.0 1.2 V Small Signal Load Switch High Speed Interfacing Level Shift NCHANNEL MOSFET D (3) MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage V 20 V DSS G (1) GatetoSource Voltage V 8 V GS Continuous Drain Steady T = 25C I 220 mA A D Current (Note 1) State T = 85C 158 A t 5 s T = 25C 253 A Power Dissipation Steady T = 25C P 125 mW A D S (2) (Note 1) State t 5 s 166 Pulsed Drain t = 10 s I 846 mA DM p MARKING DIAGRAM Current Operating Junction and Storage T , T 55 to C J STG Temperature Range 150 EM Source Current (Body Diode) (Note 2) I 200 mA S XDFN3 1 Lead Temperature for Soldering Purposes T 260 C L CASE 711BH (1/8 from case for 10 s) E = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using the minimum recommended pad size, 2 or 2 mm , 1 oz Cu. ORDERING INFORMATION 2. Pulse Test: pulse width 300 s, duty cycle 2% Device Package Shipping XDFN3 NTNS0K8N021ZTCG 8000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: January, 2021 Rev. 1 NTNS0K8N021Z/DNTNS0K8N021Z THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 3) R 998 JA C/W JunctiontoAmbient t 5 s (Note 3) R 751 JA 2 3. Surfacemounted on FR4 board using the minimum recommended pad size, or 2 mm , 1 oz Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D Zero Gate Voltage Drain Current I V = 0 V, V = 5 V T = 25C 50 nA DSS GS DS J Zero Gate Voltage Drain Current I V = 0 V, V = 16 V T = 25C 100 nA DSS GS DS J GatetoSource Leakage Current I V = 0 V, V = 5 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D V = 4.5 V, I = 100 mA 0.8 1.5 GS D V = 1.8 V, I = 20 mA 1.4 3.0 DraintoSource On Resistance R GS D DS(on) V = 1.2 V, I = 10 mA 3.2 8.0 GS D Forward Transconductance g V = 5 V, I = 125 mA 0.48 S FS DS D SourceDrain Diode Voltage V V = 0 V, I = 10 mA 0.6 1.0 V SD GS S CHARGES & CAPACITANCES Input Capacitance C 12.3 ISS Output Capacitance C V = 0 V, freq = 1 MHz, V = 15 V 3.4 pF OSS GS DS Reverse Transfer Capacitance C 2.5 RSS SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) TurnOn Delay Time t 16.5 d(ON) Rise Time t 25.5 r V = 4.5 V, V = 15 V, GS DD ns I = 200 mA, R = 2 D G TurnOff Delay Time t 142 d(OFF) Fall Time t 80 f 4. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2